Rounded Silicon Tip Geometry for Reduced Photonic Light Loss

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Solution Overview

Problem

Light loss is a significant challenge in silicon photonics for optical data communication, which affects the efficiency and performance of optical transceiver modules and optical links.

Innovation Solution

The implementation of a silicon tip with specific geometric features, such as rounded or sloping edges and intermediate surfaces, to enhance light confinement and minimize light field shift, combined with a grating coupler for efficient optical signal transmission and reception.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If conventional silicon photonics structures are used, then device integration is achieved, but light loss is significant

Engineering Contradiction:
Improvelight lossVSAvoidoptical signal transmission reliability
Core Design Contradiction:
Loss of energyVSReliability

Solution Approach 1:

The patent applies curvature by rounding the corners of the silicon tip structure. Instead of sharp 90-degree corners, the design implements rounded corners with a specified radius of curvature. This geometric modification reduces light field distortion and minimizes light loss during optical signal transmission, directly addressing the technical contradiction by improving light confinement while maintaining structural integrity for device integration

Inventive Principle:
Principle #14Spheroidality (Curvature)

2Loss of energy

If sharp-cornered silicon tip is used, then manufacturing is simpler, but light field shift is significant causing light loss

Engineering Contradiction:
Improvelight lossVSAvoidsilicon tip fabrication complexity
Core Design Contradiction:
Loss of energyVSEase of manufacture

Solution Approach 1:

The patent implements rounded corners on the silicon tip structure with a specified radius of curvature. This geometric modification reduces light field distortion and minimizes light loss during optical signal transmission. The rounding process can be integrated into existing CMOS fabrication sequences, adding minimal complexity while significantly improving optical performance

Inventive Principle:
Principle #14Spheroidality (Curvature)

3Loss of energy

If light confinement is enhanced through geometric modifications, then light loss is reduced, but device complexity increases

Engineering Contradiction:
Improvelight lossVSAvoidsilicon tip structure complexity
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent applies geometric modifications (rounded corners) only at specific critical locations (the corners of the silicon tip) rather than redesigning the entire structure. This localized approach enhances light confinement and reduces light loss where it is most needed, while keeping the rest of the device structure simple and compatible with standard CMOS fabrication processes

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design significantly reduces light loss by more than 70%, improving the efficiency and performance of optical signal processing systems.

Implementation Method 1

the silicon tip comprises an upper portion, a lower portion, and sidewalls extending from the upper portion to the lower portion

Methodology Applied
Scientific EffectTotal internal reflection: Total Internal Reflection

Data Source

PatentUS20250224563A1Semiconductor device and system for optical signal processing
Publication Date: 2025.07.10 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250224563A1 patent drawing
  • US20250224563A1 patent drawing
  • US20250224563A1 patent drawing

AI summary

A semiconductor device for optical signal transmitting includes a substrate and a silicon structure. The silicon structure is formed on a surface of the substrate, wherein the silicon structure comprises an upper surface, a lower surface, and side surfaces between the upper surface and the lower surface, the lower surface is in contact with the surface of the substrate. A plurality of first intermediate surfaces is between the lower surface and the side surfaces, and a plurality of second intermediate surfaces is between the upper surface and the side surfaces. The plurality of first intermediate surfaces is formed at different angles than the side surfaces, and the plurality of second intermediate surfaces is formed at different angles than the side surfaces.