Rounded Wafer Vessel Rods for Uniform Vertical CVD Processing

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Solution Overview

Problem

Current semiconductor fabrication technologies face challenges in uniformly processing multiple wafers within vertical thermal reaction chambers, particularly in achieving consistent thin film deposition during CVD processes due to non-uniform gas flow and heating distribution.

Innovation Solution

The use of rounded vertical wafer vessel rods with a vertically-stacked configuration and oblique finger portions to securely hold wafers in a vertically-stacked relationship, allowing for improved gas circulation and uniform heating within a vertical thermal reaction chamber, which includes a cylindrical design and a gas manifold for controlled reactant gas introduction.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If wafers are processed in vertical thermal reaction chambers using conventional rod structures, then multiple wafers can be processed simultaneously, but non-uniform gas flow and heating distribution occur leading to inconsistent thin film deposition

Engineering Contradiction:
ImprovethroughputVSAvoidthin film deposition uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies curvature by rounding the ends of the vertical rods that contact the wafers. This rounded configuration modifies the gas flow patterns around the rod-wafer interface, eliminating dead zones and improving gas distribution uniformity. The curved surfaces also facilitate more uniform thermal radiation and convection heating across the wafer surfaces, thereby achieving consistent thin film deposition while maintaining high throughput processing of multiple wafers

Inventive Principle:
Principle #14Spheroidality (Curvature)

2Ease of operation

If conventional vertical rod structures are used to hold wafers, then wafer support is provided, but gas circulation is restricted leading to non-uniform processing conditions

Engineering Contradiction:
Improvewafer supportVSAvoidgas flow distribution
Core Design Contradiction:
Ease of operationVSQuantity of substance

Solution Approach 1:

The rounded ends of the vertical rods create smoother gas flow paths around the wafer support structure. This curvature eliminates sharp edges that would otherwise create flow separation and dead zones, enabling more uniform reactant gas circulation throughout the chamber. The modified flow patterns ensure adequate gas supply to all wafer surfaces while maintaining secure mechanical support

Inventive Principle:
Principle #14Spheroidality (Curvature)

3Productivity

If multiple wafers are vertically stacked for processing, then processing efficiency is improved, but heating distribution becomes non-uniform affecting deposition consistency

Engineering Contradiction:
Improveprocessing efficiencyVSAvoidheating distribution uniformity
Core Design Contradiction:
ProductivityVSTemperature

Solution Approach 1:

The rounded rod ends modify the thermal radiation and convection patterns in the vertical chamber. The curved surfaces distribute thermal energy more uniformly across all vertically-stacked wafers, eliminating hot and cold spots that occur with conventional flat-ended rods. This enables consistent heating throughout the wafer stack, achieving uniform thin film deposition while maintaining high processing efficiency through multi-wafer batch processing

Inventive Principle:
Principle #14Spheroidality (Curvature)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables efficient and uniform processing of multiple wafers by promoting consistent gas flow and heating, enhancing the uniformity of thin film deposition and overcoming previous challenges in semiconductor fabrication.

Implementation Method 1

rounded vertical wafer vessel rods with a vertically-stacked configuration and oblique finger portions to securely hold wafers in a vertically-stacked relationship, allowing for improved gas circulation and uniform heating within a vertical thermal reaction chamber

Methodology Applied
Scientific EffectConvection: Convection

Implementation Method 2

achieving consistent thin film deposition during CVD processes

Methodology Applied
Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Data Source

PatentUS11908719B2Rounded vertical wafer vessel rods
Publication Date: 2024.02.20 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11908719B2 patent drawing
  • US11908719B2 patent drawing
  • US11908719B2 patent drawing

AI summary

In an embodiment, a system includes: a base; and a rod set comprising multiple rods connected to the base, wherein each rod of the rod set comprises multiple fingers disposed in a vertically-stacked relationship to each other and separated respectively from each other by respective slots, wherein each slot is configured to receive a bevel of a wafer, and wherein each of the multiple fingers comprises a rounded end at a furthest extension.