Row Decoder Section Enable Signals Across Multiple Voltage Domains
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Solution Overview
Problem
As semiconductor memory devices, such as DRAM, decrease in size, there is a need to reduce the size of components like the row decoder, particularly in managing different voltage domains for signal conversion.
Innovation Solution
A row decoder with multiple section enable signal voltage domains is implemented, using a section enable signal driver to generate signals in different voltage domains (VCCP and VACTD) without the need for an additional buffer transistor, by dividing the section enable signal into two signals operating in intermediate and higher voltage domains.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If a conventional row decoder design is used with signal conversion between voltage domains, then signal conversion functionality is achieved, but the row decoder size increases due to requiring additional buffer transistors
Solution Approach 1:
The patent extracts the voltage domain conversion functionality from the traditional buffer transistor and relocates it to the gate control mechanism. By using the gate voltage of the access transistor to directly control the source follower output, the design eliminates the need for separate buffer transistors while maintaining proper signal level conversion between voltage domains.
Solution Approach 2:
The access transistor's gate serves multiple functions: it controls the access transistor operation and simultaneously generates the section enable signal through the source follower. This multi-functionality eliminates the need for dedicated buffer transistors, reducing the overall row decoder size while maintaining signal conversion capability.
2Area of stationary object
If the row decoder size is reduced to meet scaling requirements, then area is saved, but signal conversion reliability between different voltage domains may be compromised
Solution Approach 1:
The source follower circuit acts as an intermediary between the high voltage domain (VCCP) and low voltage domain (VPERI). It converts the high voltage section enable signal to a low voltage signal that can be safely used in the low voltage domain, ensuring reliable signal conversion without requiring additional buffer transistors.
Solution Approach 2:
The patent changes the voltage parameter of the section enable signal from high voltage (VCCP) to low voltage (VPERI) through the source follower configuration. This parameter transformation enables the signal to be used in the low voltage domain while maintaining conversion reliability without additional buffering.
Data Source
AI summary
Apparatuses, systems, and methods for a row decoder with multiple section enable signal voltage domains. A row address is decoded into a pre-enable signal. A first section enable signal and a second section enable signal are generated based on the pre-enable signal. The first section enable signal is in a first voltage domain where a first voltage represents an logical high, the second section enable signal is in a second voltage domain where a second voltage represents a logical high, and the pre-enable signal is in a third voltage domain where a third voltage represents a logical high. The second voltage is between the first and third voltages. A word line driver signal is generated based on the first and the second section enable signals.