RRAM Barrier Structure for Reverse Breakdown During Erase
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Solution Overview
Problem
Resistive random access memory devices are prone to reverse breakdown during the erasing process due to a large current flowing through them, leading to device failure.
Innovation Solution
Incorporating a barrier structure between the resistive layer and the upper electrode, comprising a barrier layer and an intercalation layer, which allows electrons to pass through the conduction band during the erasing operation, preventing defects and reverse breakdown by storing oxygen ions and avoiding their direct entry into the upper electrode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a large current flows through the device during erasing operation, then the erasing operation can be performed, but reverse breakdown occurs leading to device failure
Solution Approach 1:
A barrier structure comprising a barrier layer and an intercalation layer is introduced between the resistive layer and the upper electrode. This intermediary structure allows controlled electron transport through its conduction band during erasing operations, preventing excessive current damage while maintaining device functionality
Solution Approach 2:
The barrier structure modifies the electrical parameters at the interface between the resistive layer and upper electrode. By controlling the conduction band characteristics of the barrier layers, the device can withstand erasing currents without experiencing reverse breakdown, thus improving reliability while maintaining productivity
2Reliability
If the barrier structure is added between the resistive layer and upper electrode, then reverse breakdown is prevented, but device complexity increases
Solution Approach 1:
The barrier structure is divided into two distinct layers: a barrier layer and an intercalation layer. This segmentation allows each layer to perform specific functions - the barrier layer provides the primary conduction band barrier, while the intercalation layer enhances oxygen ion storage capacity - achieving improved reliability without excessive complexity
Solution Approach 2:
The barrier structure uses composite material design with the barrier layer made of TaOx and the intercalation layer made of materials such as Ta, Ti, metal oxides, or amorphous silicon. This composite approach optimizes the electrical and chemical properties to prevent reverse breakdown while maintaining a manageable structural complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The barrier structure enhances the durability of the resistive random access memory by preventing reverse breakdown, enabling stable operation with improved resistance state transitions and a wider selection range of erasing voltage, allowing over 100,000 cycles without failure.
Implementation Method 1
the barrier structure is configured for an electron to pass through a conduction band of the barrier structure when the device performs the erasing operation
Implementation Method 2
the barrier layer is configured as a storage layer of oxygen ions when the device performs the erasing operation
Data Source
AI summary
The present disclosure provides a resistive random access memory and a method of preparing the same. The resistive random access memory includes: a resistive layer, an upper electrode and a barrier structure. The resistive layer is arranged on a substrate; the upper electrode is arranged on the resistive layer; and the barrier structure is arranged between the resistive layer and the upper electrode, and the barrier structure is configured for electrons to pass through a conduction band of the barrier structure when a device performs an erasing operation, so as to avoid forming of a defect in the resistive layer and causing a reverse breakdown of the resistive layer.