RRAM Memory Cell Direct Selector Contact Without Conductive Pillars
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Solution Overview
Problem
Conventional methods for forming connections between selectors and memory elements in semiconductor devices, such as resistive random-access memory (RRAM) cells, face challenges due to damage from etching and planarizing processes, leading to unreliable connections and low manufacturing yield.
Innovation Solution
The connection between a selector and a memory element is established through direct contact without a conductive pillar, using a connecting structure that is patterned and embedded in a dielectric layer, followed by a dielectric material to secure the connection and protect the memory element from further damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conductive pillar is used to connect selector and memory element, then electrical connection is established, but the connection is damaged by etching and planarizing processes leading to low manufacturing yield
Solution Approach 1:
The patent removes the conductive pillar from the connection structure between selector and memory element. Instead of using a separate conductive pillar that requires etching and planarizing processes, the invention directly contacts the selector with the memory element through a simplified structure, eliminating the harmful processes and improving both connection reliability and manufacturing yield
Solution Approach 2:
The connection structure is segmented into distinct functional regions: a first region for the selector, a second region for the memory element, and a third region for the connecting structure. This segmentation allows each component to be optimized independently while maintaining direct contact, avoiding the need for complex etching and planarizing processes that damage conventional conductive pillar connections
2Ease of manufacture
If conventional etching and planarizing processes are used to form connections, then electrical connection is achieved, but processing complexity and thermal budget increase
Solution Approach 1:
The patent extracts and eliminates the etching and planarizing processes from the connection formation sequence. By removing the conductive pillar that necessitates these complex processes, the invention simplifies the manufacturing workflow, reduces thermal budget, and decreases processing complexity while maintaining effective electrical connection
Solution Approach 2:
Instead of following the conventional approach of forming conductive pillars through etching and planarizing, the invention inverts the methodology by using direct contact between selector and memory element. This reversal of the conventional process sequence eliminates complex processing steps and reduces overall device fabrication complexity
Data Source
AI summary
A memory cell includes a memory device, a connecting structure, an insulating layer and a selector. The connecting structure is disposed on and electrically connected to the memory device. The insulating layer covers the memory device and the connecting structure. The selector is located on and electrically connected to the memory device, where the selector is disposed on the insulating layer and connected to the connecting structure by penetrating through the insulating layer.