RRAM Stacked Structure with Vertical Selector for Integration
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Solution Overview
Problem
Conventional resistive random access memory (RRAM) designs are limited in integration due to the need for a selector element to control current flow, which restricts the reduction of device volume and integration density.
Innovation Solution
A stacked structure with a selector element formed in a channel hole between a vertical electrode and a stacked structure, along with resistance changeable structures on the surface of horizontal electrodes, reduces the required volume and improves integration by preventing sneak current while allowing for efficient current control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a selector element such as MOS is disposed in conventional RRAM design to control current flow, then read failure due to sneak current is prevented, but device volume cannot be further reduced and integration is limited
Solution Approach 1:
The selector element and resistance changeable layer are merged into a single integrated structure where the selector element is formed within the same stack as the resistance changeable layer. This integration eliminates the need for separate selector element structures and reduces overall device volume while maintaining sneak current prevention functionality.
Solution Approach 2:
The invention transitions from a planar arrangement to a vertical stacked architecture where the selector element is positioned in a specific vertical location within the stack. This dimensional reorganization allows compact integration while preserving the electrical control function for preventing read failure.
2Reliability
If a selector element is added to control current flow path, then sneak current is prevented, but device complexity increases
Solution Approach 1:
The selector element is merged with the resistance changeable layer in a unified stack structure, reducing the number of discrete components and simplifying the overall device architecture while maintaining the necessary current control functionality.
Solution Approach 2:
The integrated stack structure serves multiple functions simultaneously: the selector element provides sneak current prevention while the resistance changeable layer provides memory storage functionality, and both are controlled through the same vertical electrode structure, reducing overall device complexity.
Data Source
AI summary
A resistive random access memory including a stacked structure, at least one vertical electrode, a selector element, and a plurality of resistance changeable structures is provided. The stacked structure is formed by a plurality of horizontal electrodes and a plurality of first dielectric layers stacked alternately, wherein the stacked structure has at least one channel hole extending through the horizontal electrodes and the first dielectric layers. The vertical electrode is formed in the at least one channel hole. The selector element is formed in the channel hole between the vertical electrode and the stacked structure. The resistance changeable structures are disposed on the surface of each of the horizontal electrodes and are in contact with the selector element in the channel hole.