RRAM Top Electrode Extension for Plasma Damage Protection
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Solution Overview
Problem
Plasma-induced damage during the deposition and dry etching processes in the manufacturing of resistive random access memory (RRAM) devices affects the electrical performance and reliability of memory devices, leading to reduced product yield.
Innovation Solution
A memory device structure is designed with a substrate having distinct regions, featuring a capacitor with a top electrode connected to a protection device through metal interconnects, which prevents plasma-induced damage by electrically linking the top electrode to the protection device, thereby shielding it from subsequent deposition and etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a simple MIM structure is used for RRAM integration, then device complexity is reduced and manufacturing is simplified, but plasma-induced damage occurs during subsequent deposition and dry etching processes
Solution Approach 1:
A protection device (diode or bipolar junction transistor) is introduced as an intermediary element between the capacitor and the subsequent processing steps. This protection device acts as a mediator that shields the capacitor from plasma-induced damage during deposition and dry etching processes, while allowing the simple MIM structure to be maintained
Solution Approach 2:
The protection device is formed in advance before the subsequent deposition and dry etching processes. This preliminary protective structure prevents plasma-induced damage from affecting the capacitor during these processing steps, allowing the simple MIM structure to proceed without vulnerability
2Ease of manufacture
If subsequent deposition and dry etching processes are performed, then metal interconnects are formed for device functionality, but plasma-induced damage occurs to the RRAM structure
Solution Approach 1:
The protection device serves as an intermediary that enables the subsequent deposition and dry etching processes to proceed while preventing plasma-induced damage to the RRAM structure. This mediator allows manufacturing to continue while protecting device reliability
Solution Approach 2:
The protection device is formed in advance before the subsequent deposition and dry etching processes. This preliminary action ensures that when these manufacturing steps are performed, the RRAM structure is already shielded from plasma-induced damage, maintaining both manufacturability and reliability
3Reliability
If the top electrode is extended onto the substrate of the second region, then electrical connection to the protection device is enabled, but device structure becomes more complex
Solution Approach 1:
The top electrode serves multiple functions: it provides the capacitor's electrical function in the first region and simultaneously extends to provide electrical connection to the protection device in the second region. This multi-functionality reduces the need for separate connection structures, minimizing additional complexity while ensuring protection effectiveness
Data Source
AI summary
The invention provides a memory device and a manufacturing method thereof. The memory device includes a substrate, a capacitor, a protection device, a first metal interconnect, and a second metal interconnect. The capacitor is located on the substrate of a first region. The protection device is located in the substrate of a second region. The capacitor includes a plurality of bottom electrodes, a top electrode, and a capacitor dielectric layer. The top electrode has a first portion and a second portion, wherein the second portion is extended to the second region. The capacitor dielectric layer is located between the bottom electrodes and the top electrode. The first metal interconnect is located between the capacitor and the substrate. The second metal interconnect is located between the second portion of the top electrode and the protection device. The top electrode is electrically connected to the protection device through the second metal interconnect.