RRAM Memory Cell Structure with Multi-Directional Word Line
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Solution Overview
Problem
Resistive Random Access Memory (RRAM) faces challenges in yield rate and efficiency, despite its advantages of low power consumption, low operation voltage, and long storage time.
Innovation Solution
A memory cell structure comprising a substrate with doping regions, a gate, and a resistive layer, where the word line extends in a specific directional pattern to form transistors, and the resistive layer is connected to the doping regions, allowing for efficient data storage and retrieval through controlled resistance levels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional RRAM structure is used, then low power consumption and long storage time are achieved, but yield rate and efficiency are insufficient
Solution Approach 1:
The patent segments the word line into multiple directional segments (first direction and second direction) that intersect with doping regions to form multiple transistors. This segmentation allows a single word line to control multiple memory cells, improving both yield rate through better transistor performance and efficiency through increased cell density.
Solution Approach 2:
The patent introduces a multi-directional layout approach where the word line extends in different directions (first direction and second direction) to form transistors with doping regions. This dimensional change from conventional single-direction layouts enables more effective use of space and improves transistor performance, thereby enhancing both yield rate and efficiency.
2Productivity
If more doping regions and transistors are added to improve efficiency, then data storage capability increases, but device complexity increases
Solution Approach 1:
The patent makes the word line multi-functional by having it extend in multiple directions to form multiple transistors. A single word line structure serves multiple functions by controlling multiple memory cells through different directional segments, thereby increasing efficiency without proportionally increasing device complexity.
Solution Approach 2:
The patent merges multiple transistor functions into a single integrated structure where the word line forms intersections with doping regions in different directions. This combining approach allows multiple transistors to be controlled through a unified word line structure, improving efficiency while managing complexity through integration.
Data Source
AI summary
A memory cell structure is provided. A first doping region is formed in a substrate. A second doping region is formed in the substrate. A first gate is formed on the substrate. The first and second doping regions and the first gate constitute a first transistor. A first word line is electrically connected to the first gate. The first word line firstly extends along a first direction and then along a second direction which is different from the first direction. A resistive layer is electrically connected to the first doping region. A conductive layer comprises a first source line and a bit line. The first source line is electrically connected to the second doping region, and the bit line is electrically connected to the resistive layer. The first and second doping regions extend along a third direction which is different from the first and second directions.