Co-Integrated RTD-FET Layout for Low-Power Qubit Pulse Generation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current quantum computers face scalability issues due to bulky room temperature equipment and high power dissipation in cryogenic qubit control integrated circuits, limiting the ability to efficiently generate high-frequency pulses for qubit control and readout in quantum computing systems.
Innovation Solution
A semiconductor device comprising a co-integrated resonant tunneling diode (RTD) and field effect transistor (FET) is fabricated, allowing for the generation of high-frequency pulses with reduced power consumption by integrating these components along a substrate, enabling efficient signal generation and qubit control within a cryogenic environment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional room temperature equipment is used for qubit control, then device complexity is reduced, but power dissipation increases and scalability is limited
Solution Approach 1:
The patent combines the RTD and FET into a single co-integrated semiconductor device structure where the RTD generates high-frequency oscillations and the FET amplifies the signal. This merging of signal generation and amplification functions into one integrated device reduces the number of separate components needed, thereby reducing overall device complexity while maintaining low power dissipation through the RTD's efficient oscillation mechanism.
Solution Approach 2:
The co-integrated device serves multiple functions: the RTD acts as both a signal generator and a frequency-determining element, while the FET provides signal amplification and control. This multi-functionality within a single integrated structure eliminates the need for separate room-temperature equipment, reducing both power dissipation and device complexity simultaneously.
2Manufacturing precision
If RTD and FET are co-integrated in a lateral stack arrangement, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent transitions from vertical stacking to a lateral stack arrangement where the RTD and FET are positioned side-by-side in the same layer. This dimensional change simplifies the integration structure by eliminating the need for complex vertical alignment between layers, thereby reducing device complexity while maintaining high manufacturing precision through planar fabrication processes.
3Productivity
If high-frequency pulses are generated for qubit control, then productivity is improved, but power consumption increases
Solution Approach 1:
The patent utilizes the RTD's negative differential resistance region by carefully controlling the bias voltage to operate within the negative resistance region, enabling self-sustained high-frequency oscillations. By changing the operating parameters (bias voltage, current) to exploit the RTD's unique electrical characteristics, the device generates high-frequency pulses with low power consumption, improving productivity without increasing power usage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves significant power efficiency, using up to 5-10 times less power than conventional Si CMOS solutions and 10^4-10^5 times less power than conventional arbitrary waveform generators, facilitating scalable quantum computing by enabling efficient qubit control and readout with lower power dissipation.
Implementation Method 1
semiconductor device comprising a resonant tunneling diode (RTD) and field effect transistor (FET) co-integrated in a common layer
Data Source
AI summary
One or more systems, devices and/or methods provided herein relate to a device that can facilitate generation of a pulse to affect a qubit and to a method that can facilitate fabrication of a semiconductor device. The semiconductor device can comprise an RTD and an FET co-integrated in a common layer extending along a substrate. A method for fabricating the semiconductor device can comprise applying, at a substrate layer, a template structure comprising an opening, a cavity and a seed structure comprising a seed material and a seed surface, and sequentially growing along the substrate a plurality of diode layers of an RTD and a plurality of transistor layers of an FET within the cavity of the template structure from the seed surface, wherein the RTD and FET are co-integrated along the substrate.