Resonant Tunneling Diode Superlattice Barrier for Mobility Control
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Solution Overview
Problem
Current semiconductor devices do not fully leverage advanced materials and processing techniques to achieve optimal performance, particularly in terms of charge carrier mobility and integration with standard CMOS processes.
Innovation Solution
The development of a semiconductor device with a resonant tunneling diode structure that incorporates a superlattice with non-semiconductor monolayers constrained within the crystal lattice of semiconductor portions, enhancing electron mean free path control and providing improved conductivity effective mass characteristics, allowing for higher charge carrier mobility and integration with standard CMOS processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional semiconductor structures are used, then manufacturing simplicity is maintained, but charge carrier mobility is limited due to scattering effects
Solution Approach 1:
The barrier layer is segmented into a superlattice structure comprising multiple alternating layers of first semiconductor material and second semiconductor material. This segmentation creates multiple interfaces that control electron mean free path and reduce scattering effects, thereby improving charge carrier mobility while managing the increased structural complexity through systematic layering
Solution Approach 2:
The invention employs composite material structures where the barrier layer is formed by combining two different semiconductor materials in a superlattice configuration. This composite approach allows tuning of electronic properties to enhance mobility while maintaining compatibility with standard CMOS manufacturing processes
2Speed
If advanced materials and processing techniques are implemented, then charge carrier mobility is enhanced, but integration with standard CMOS processes becomes difficult
Solution Approach 1:
The invention adjusts material parameters such as layer thickness, composition ratios, and crystal orientation to optimize charge carrier mobility while ensuring compatibility with standard CMOS fabrication conditions. By carefully controlling these parameters, the superlattice structure achieves enhanced performance without requiring non-standard manufacturing processes
Solution Approach 2:
The superlattice structure is designed with homogeneous alternating layers that maintain consistent electronic properties throughout the barrier region. This homogeneity ensures predictable device behavior and facilitates integration with standard CMOS processes by providing uniform electrical characteristics that can be reliably manufactured
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in enhanced charge carrier mobility and reduced scattering effects, enabling improved performance in semiconductor devices and facilitating integration with standard CMOS processes, while also providing potential benefits for opto-electronic devices and other applications.
Implementation Method 1
a resonant tunneling diode structure with electron mean free path control layers comprising a superlattice
Implementation Method 2
reduced scattering effects, enabling improved performance in semiconductor devices
Implementation Method 3
providing improved conductivity effective mass characteristics
Implementation Method 4
The resulting biaxial strain in the upper silicon layer alters the carrier mobilities enabling higher speed
Data Source
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AI summary
A semiconductor device includes at least one double-barrier resonant tunneling diode (DBRTD). The at least one DBRTD includes a first doped semiconductor layer, and a first barrier layer on the first doped semiconductor layer and including a superlattice. The DBRTD further includes a first intrinsic semiconductor layer on the first barrier layer, a second barrier layer on the first intrinsic semiconductor layer and also including the superlattice, a second intrinsic semiconductor layer on the second barrier layer, a third barrier layer on the second intrinsic semiconductor layer and also including the superlattice. A third intrinsic semiconductor layer is on the third barrier layer, a fourth barrier layer is on the third intrinsic semiconductor layer and also including the superlattice, a second doped semiconductor layer is on the fourth barrier layer.