RTP Steam Delivery Module for Selective Silicon Oxidation
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Solution Overview
Problem
Conventional steam oxidation processes in integrated circuit fabrication lack control over oxide growth rate, uniformity, selectivity, and conformality, particularly in the selective oxidation of silicon surfaces in the presence of metals.
Innovation Solution
A rapid thermal processing system with a gas distribution module that mixes a carrier gas with water to form a vaporized mixture, which is then delivered to the RTP chamber, allowing for precise control over the oxide growth process through adjustable carrier gas to steam ratios and high-temperature processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional steam oxidation processes are used, then oxide growth rate is improved, but control over oxide growth rate, uniformity, selectivity, and conformality deteriorates
Solution Approach 1:
The patent changes the physical state of water from liquid to vapor through controlled heating, and introduces precise control over steam concentration and temperature parameters. This allows maintaining fast oxide growth while achieving precise control over growth rate, uniformity, selectivity, and conformality by adjusting vapor phase parameters rather than relying on conventional liquid-based steam processes
Solution Approach 2:
The patent utilizes the phase transition of water from liquid to vapor in a controlled manner. By heating water to generate steam and then controlling the vaporization process, the system achieves both rapid oxide growth (benefit of steam) and precise control (through controlled phase transition and vapor delivery), resolving the contradiction between speed and control
2Productivity
If steam oxidation processes are used, then oxide growth speed is improved, but selectivity in the presence of metals deteriorates
Solution Approach 1:
The patent achieves selectivity by precisely controlling temperature and steam concentration parameters in the vapor phase. By maintaining specific temperature ranges and steam partial pressures, the process selectively oxidizes silicon while avoiding metal oxidation, even at high growth speeds. This parameter control in the vapor phase provides selectivity that conventional steam processes cannot achieve
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system enables improved control over oxide growth rate, uniformity, selectivity, and conformality, facilitating selective oxidation of non-metal surfaces at high temperatures, enhancing the precision and efficiency of silicon oxidation processes.
Implementation Method 1
the vaporizer having a heater configured to vaporize the first mixture
Implementation Method 2
a radiative heat source for heating the substrate
Implementation Method 3
Oxidation of silicon is a fundamental technology in the fabrication of an integrated circuit (IC)
Data Source
AI summary
Embodiments of gas distribution modules for use with rapid thermal processing (RTP) systems and methods of use thereof are provided herein. In some embodiments, a gas distribution module for use with a RTP chamber includes: a first carrier gas line and a first liquid line fluidly coupled to a mixer, the mixer having one or more control valves configured to mix a carrier gas from the first carrier gas line and a liquid from the first liquid line in a desired ratio to form a first mixture; a vaporizer coupled to the mixer and configured to receive the first mixture in a hollow internal volume, the vaporizer having a heater configured to vaporize the first mixture; and a first gas delivery line disposed between the vaporizer and the RTP chamber to deliver the vaporized first mixture to the RTP chamber.