RTS Noise Model for Electronic Circuit Simulation

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Semiconductor devices face increased output signal degradation due to random telegraph signal (RTS) noise, particularly in low-power applications, where existing models fail to accurately predict its impact, leading to design and production challenges.

Innovation Solution

Development of an RTS noise model and associated generator to simulate RTS noise in electronic circuit simulations, allowing designers to adjust parameters like voltage, current, and geometry to mitigate noise effects, integrated into a circuit simulator to optimize circuit design and reduce production failures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If semiconductor devices are scaled down to smaller sizes, then device integration and power consumption improve, but output signal degradation due to RTS noise increases

Engineering Contradiction:
Improvepower consumptionVSAvoidRTS noise impact
Core Design Contradiction:
Use of energy by moving objectVSObject-affected harmful factors

Solution Approach 1:

The patent applies preliminary action by performing RTS noise simulation during the circuit design phase using an RTS noise model and generator. This allows designers to predict and mitigate noise effects before actual device fabrication, enabling design modifications that reduce sensitivity to RTS noise while maintaining scaled-down dimensions and low power consumption.

Inventive Principle:
Principle #10Preliminary action

2Ease of operation

If existing standardized transistor models are used, then design process simplicity is maintained, but accuracy in predicting RTS noise impact is insufficient

Engineering Contradiction:
Improvedesign process simplicityVSAvoidRTS noise prediction accuracy
Core Design Contradiction:
Ease of operationVSMeasurement precision

Solution Approach 1:

The patent introduces an RTS noise model and generator as an intermediary component between the circuit simulator and the transistor model. This intermediary specifically addresses RTS noise effects that are not captured by standardized models, providing accurate noise prediction while maintaining ease of use through automated simulation integration and user-friendly interfaces.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Object-affected harmful factors

If circuit designs are modified to reduce RTS noise sensitivity, then noise impact decreases, but design complexity and iteration time increase

Engineering Contradiction:
Improvenoise impactVSAvoiddesign iteration time
Core Design Contradiction:
Object-affected harmful factorsVSLoss of time

Solution Approach 1:

The patent performs RTS noise simulation during the initial design phase rather than during later testing or production. This preliminary assessment allows designers to identify and modify noise-sensitive circuits before fabrication, reducing the need for costly and time-consuming post-manufacturing iterations while minimizing overall design cycle time.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent implements feedback by using RTS noise simulation results to guide design modifications. The simulator provides quantitative feedback on noise impact for different design configurations, enabling designers to make informed decisions that reduce noise sensitivity while optimizing for other performance metrics.

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS20220357390A1Electronic circuit simulation based on random telegraph signal noise
Publication Date: 2022.11.10 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20220357390A1 patent drawing
  • US20220357390A1 patent drawing
  • US20220357390A1 patent drawing

AI summary

A device may generate, using a random telegraph signal (RTS) noise generator, a simulated RTS noise as input to a transistor included in an electronic circuit. The device may determine, based on the simulated RTS noise input to the transistor, a simulated output signal from the transistor.