Ru Etching Composition With Azole Control for Metal Selectivity
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in efficiently and accurately removing unnecessary metal-containing substances, particularly ruthenium (Ru)-containing substances, with a need for improved etching performance and selectivity to avoid damaging other metal layers.
Innovation Solution
A composition containing periodic acid compounds, azole compounds, and an alkali compound, along with a water-soluble organic solvent, is used to enhance etching performance and selectivity, specifically designed for ruthenium-containing substances while minimizing impact on other metal layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etchants are used to remove ruthenium-containing substances, then etching performance is insufficient, but etching selectivity deteriorates causing damage to other metal layers
Solution Approach 1:
The patent uses a composite etching composition containing periodic acid compound (oxidizing agent), azole compound (complexing agent), and alkali compound (pH regulator) in specific ratios. This composite formulation achieves both high etching performance for ruthenium and excellent selectivity by synergistic interaction of components, preventing damage to copper and cobalt layers while efficiently removing ruthenium.
Solution Approach 2:
The patent optimizes specific parameter ranges: periodic acid compound 0.1-10 wt%, azole compound 0.01-1 wt%, alkali compound 0.1-5 wt%, and pH 2-12. By controlling these parameters, the etchant achieves optimal balance between etching speed and selectivity, enabling precise removal of ruthenium without affecting other metal layers.
2Productivity
If etching performance is increased to remove unnecessary metal substances efficiently, then productivity improves, but harmful factors increase due to potential damage to other metal layers
Solution Approach 1:
The azole compound acts as an intermediary that selectively complexes with ruthenium ions, facilitating their dissolution while the periodic acid compound provides oxidizing power. This intermediary mechanism enables high etching efficiency while the selective complexation protects copper and cobalt layers from damage, reducing harmful side effects.
Solution Approach 2:
The periodic acid compound serves as a strong oxidizing agent that accelerates the dissolution of ruthenium metal. This strong oxidation capability enables high etching productivity while the controlled formulation ensures selective attack on ruthenium rather than other metal layers, minimizing harmful effects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves excellent dissolving ability and etching selectivity for ruthenium-containing substances, effectively removing them while preserving other metal layers, thereby improving the efficiency and accuracy of the semiconductor manufacturing process.
Implementation Method 1
containing one or more periodic acid compounds selected from the group consisting of a periodic acid and a salt thereof
Implementation Method 2
an azole compound
Data Source
AI summary
An object of the present invention is to provide a composition that exhibits excellent dissolving ability and etching selectivity (particularly, etching selectivity for a Ru-containing substance and other metal-containing substances) to metal-containing substances (particularly, a Ru-containing substance), a kit for preparing the composition, and a method for treating a substrate by using the composition.The composition according to an embodiment of the present invention is a composition for removing metal-containing substances, and contains one or more periodic acid compounds selected from the group consisting of a periodic acid and a salt thereof, an azole compound, and an alkali compound.