Ru Etching Composition for Low-Residue Substrate Treatment
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Solution Overview
Problem
The miniaturization of semiconductor products requires an efficient and accurate method for removing unnecessary metal-containing substances from substrates, as residues from existing etching treatments can decrease yield and fail to meet current standards.
Innovation Solution
A composition comprising periodic acid compounds, quaternary ammonium salts, and trialkylamines is used for etching treatments on ruthenium-containing substances, optimizing the pH and concentration to minimize residues and effectively remove ruthenium-containing substances from substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etchants are used for removing ruthenium-containing substances, then the etching treatment can be performed, but a large amount of residues remain after treatment
Solution Approach 1:
The patent changes the chemical parameters of the etching composition by incorporating periodic acid compounds (providing strong oxidizing capability) combined with specific quaternary ammonium salts and trialkylamines (controlling pH and reaction rate). This parameter optimization enables complete ruthenium removal while minimizing residues, directly resolving the contradiction between etching effectiveness and residue generation.
Solution Approach 2:
The patent uses a composite etching system combining periodic acid compounds with quaternary ammonium salts and trialkylamines. This composite formulation creates synergistic effects where the periodic acid provides strong oxidation for ruthenium removal, while the quaternary ammonium salts and trialkylamines modulate the reaction to prevent excessive residue formation, achieving both high etching precision and low residue levels.
2Productivity
If etching treatment is performed to remove unnecessary metal-containing substances, then the substrate can be cleaned, but residues decrease the yield during manufacturing
Solution Approach 1:
By optimizing the concentration ratios of periodic acid compounds, quaternary ammonium salts, and trialkylamines in the etching composition, the patent achieves complete removal of ruthenium-containing substances with minimal residues. This parameter optimization directly improves manufacturing yield by eliminating residue-related defects that would otherwise require rework or cause product failure.
3Productivity
If strong etchants are used to effectively remove ruthenium-containing substances, then the removal efficiency is high, but the pH control becomes difficult and may damage the substrate
Solution Approach 1:
The patent balances the strong oxidizing power of periodic acid compounds with the pH-buffering capacity of quaternary ammonium salts and trialkylamines. This parameter balancing allows high removal efficiency of ruthenium-containing substances while maintaining substrate integrity through controlled pH levels, preventing both excessive etching and substrate damage.
Solution Approach 2:
The quaternary ammonium salts and trialkylamines act as intermediary substances that mediate between the strong oxidizing action of periodic acid and the substrate. These intermediaries control the reaction pH and rate, enabling effective ruthenium removal while protecting the substrate from damage, thus resolving the contradiction between removal efficiency and substrate reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition significantly reduces residues during etching treatments, improving the yield of semiconductor manufacturing by ensuring that ruthenium-containing substances are effectively removed, meeting current standards and requirements.
Implementation Method 1
JP3619745B discloses a treatment method of performing an etching treatment on ruthenium or osmium, the treatment method using a treatment liquid that contains periodic acid
Data Source
AI summary
An object of the present invention is to provide a composition that leaves few residues in a case where the composition is brought into contact with a Ru-containing substance to perform an etching treatment on the Ru-containing substance, and to provide a method for treating a substrate. The composition according to an embodiment of the present invention contains one or more periodic acid compounds selected from the group consisting of a periodic acid and a salt thereof, a quaternary ammonium salt represented by Formula (A), and a trialkylamine or a salt thereof.