Smooth Ru Side Gap Damascene Writer Pole Ion Beam Deposition
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Solution Overview
Problem
The existing methods for forming side gap layers in damascene write poles often result in bumpy surfaces, making bevel angle measurement difficult and impacting the magnetic properties of subsequent films, necessitating an improved method for creating smooth and consistent side gap layers.
Innovation Solution
A method involving the formation of an opening with a side wall at a specific angle, followed by ion beam deposition of a non-magnetic layer with the ion beam directed at a complementary angle, and subsequent deposition of a second layer using atomic layer chemical vapor deposition to achieve a smooth and consistent surface, ensuring the side gap layers are uniformly deposited with controlled thickness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition methods are used to form side gap layers, then the deposition process is simple, but the surface becomes bumpy making bevel angle measurement difficult and impacting magnetic properties
Solution Approach 1:
The patent applies dynamics by rotating the wafer during ion beam deposition to dynamically change the deposition angle. The wafer rotation allows the ion beam to strike the side wall at varying angles throughout the rotation cycle, enabling smooth surface formation while maintaining process control. This dynamic approach transforms a static deposition process into a controlled dynamic one that resolves the surface quality issue.
Solution Approach 2:
The patent changes multiple deposition parameters including ion beam energy (50-100 eV), deposition angle (complementary to side wall angle), and wafer rotation speed. By optimizing these parameters, the method achieves smooth surface deposition in the opening while maintaining reasonable process complexity. The parameter changes enable precise control over the deposition morphology.
2Manufacturing precision
If the ion beam is delivered at a large angle to the side wall, then deposition coverage is improved, but the surface becomes bumpy and microstructure consistency deteriorates
Solution Approach 1:
The patent introduces wafer rotation as an additional dimensional element to the deposition process. Instead of using a fixed large deposition angle that causes bumpiness, the wafer rotation adds temporal and angular dimensions, allowing the ion beam to deposit material at multiple angles during rotation. This achieves both good coverage and smooth surface with consistent microstructure.
Solution Approach 2:
By making the deposition angle dynamic through wafer rotation, the process achieves superior microstructure consistency. The continuous change in angle during rotation prevents the formation of bumps that occur with fixed large-angle deposition, while still ensuring complete coverage of the side wall surface.
3Measurement precision
If the side gap layer surface is bumpy, then deposition may be complete, but bevel angle measurement becomes very difficult and magnetic properties are impacted
Solution Approach 1:
The patent performs preliminary action by forming a smooth surface during the deposition process itself through controlled ion beam parameters and wafer rotation. By ensuring surface smoothness is achieved during deposition rather than requiring subsequent processing, the method enables accurate bevel angle measurement and maintains reliable magnetic properties from the outset.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the formation of smooth gap layers with consistent microstructure, improving bevel angle control and magnetic properties, thereby enhancing the performance of the write head by preventing magnetic field leakage and improving data writing efficiency.
Implementation Method 1
a first non-magnetic layer is deposited into the opening by ion beam deposition
Implementation Method 2
subsequent deposition of a second layer using atomic layer chemical vapor deposition
Data Source
AI summary
The present invention generally relates to a method for forming a smooth gap of a damascene write pole. An opening having a side wall with a first angle with respect to vertical is formed in a fill layer, and a first non-magnetic layer is deposited into the opening by ion beam deposition. The ion beam is delivered to the side wall at a second angle with respect to vertical. The ratio of the first angle to the second angle ranges from about 250 to about 3.5.