Rugged Semiconductor Radiation Detector with Nonconductive Buffer Zones

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Solution Overview

Problem

Conventional radiation detectors used in downhole tools are prone to electrical failure due to arcing under high-temperature and high-vibration conditions, limiting their effectiveness in harsh environments and requiring larger tool sizes to accommodate multiple detectors.

Innovation Solution

A rugged semiconductor radiation detector with a hermetically sealed housing and nonconductive buffer zones between metallization layers on the semiconductor surfaces, reducing electrical field stresses and preventing arcing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If semiconductor detectors are used to reduce size, then device compactness is improved, but reliability deteriorates due to electrical failure from arcing under high temperature conditions

Engineering Contradiction:
Improvedetector sizeVSAvoidelectrical stability
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

The patent applies local quality by creating a nonconductive buffer zone specifically at the edge regions of the semiconductor detector where electrical field stress is highest. This localized modification - leaving the metallization layers incomplete at the edges to create buffer zones - addresses the arcing problem precisely where it occurs most frequently, while maintaining full metallization coverage in the central detection regions. This resolves the contradiction by preserving the compact semiconductor design while locally enhancing electrical stability at critical stress points.

Inventive Principle:
Principle #3Local quality

2Measurement precision

If multiple radiation detectors are included to improve detection capability, then measurement precision is improved, but device complexity increases requiring larger tool size

Engineering Contradiction:
Improvedetection accuracyVSAvoidtool size
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent merges multiple detection functions into a single semiconductor detector unit. By implementing a ruggedized semiconductor detector with extended buffer zones that prevents electrical failure, the design allows one detector to reliably perform multiple measurement functions that would otherwise require multiple separate detectors. This merging approach maintains measurement precision while reducing device complexity and tool size requirements.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution allows for a compact, reliable radiation detector that can withstand harsh conditions, providing accurate radiation detection without electrical failure, even in high-temperature and high-vibration environments, and enabling smaller tool sizes for more efficient downhole operations.

Implementation Method 1

The first metallization layer or the second metallization layer, or both, do not extend completely to an edge of the semiconductor, thereby providing a nonconductive buffer zone. This reduces electrical field stresses that occur when a voltage potential is applied between the first metallization layer and the second metallization layer

Methodology Applied
Scientific EffectElectrical field stress reduction: Electric Field

Implementation Method 2

A rugged semiconductor radiation detector with a hermetically sealed housing and nonconductive buffer zones between metallization layers on the semiconductor surfaces

Methodology Applied
Scientific EffectHermetic sealing: Physical Containment

Data Source

PatentUS10408969B2Rugged semiconductor radiation detector
Publication Date: 2019.09.10 SCHLUMBERGER TECH CORP
  • US10408969B2 patent drawing
  • US10408969B2 patent drawing
  • US10408969B2 patent drawing

AI summary

Devices and methods for a rugged semiconductor radiation detector are provided. The semiconductor detector may include a hermetically sealed housing and a semiconductor disposed within the housing that has a first surface and a second surface opposite one another. A first metallization layer may at least partially cover the first surface of the semiconductor and a second metallization layer may at least partially cover the second surface of the semiconductor. The first metallization layer or the second metallization layer, or both, do not extend completely to an edge of the semiconductor, thereby providing a nonconductive buffer zone. This reduces electrical field stresses that occur when a voltage potential is applied between the first metallization layer and the second metallization layer and reduces a likelihood of electrical failure (e.g., due to arcing).