Ruthenium Complex Mixture for Low-Temperature CVD Film Formation
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Solution Overview
Problem
Current methods for forming ruthenium films by chemical vapor deposition (CVD) face challenges such as high temperature requirements and prolonged incubation times, leading to inefficiencies and difficulties in controlling film thickness and electrical properties.
Innovation Solution
A mixture of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium is used as a ruthenium complex, allowing for lower temperature film formation and shorter incubation times, with the bis(2,4-dimethylpentadienyl)ruthenium content ranging from 0.1-100% by weight, enhancing electrical properties and stability in the film formation process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium (DER) is used as a raw material for CVD, then stable feeding and liquid state at ordinary temperature are achieved, but high temperature is required for film formation and incubation time is prolonged
Solution Approach 1:
The invention uses a composite raw material system consisting of DER mixed with a ruthenium compound having high reactivity at low temperatures (such as bis(2,4-dimethylpentadienyl)ruthenium). This composite approach combines the handling advantages of liquid DER with the low-temperature reactivity of solid ruthenium compounds, enabling film formation at lower temperatures while maintaining stable feeding through the liquid component.
Solution Approach 2:
The invention changes the physical state parameter of the raw material system by using a mixture where one component (DER) is liquid at ordinary temperature while the other component (high reactivity ruthenium compound) is solid. This parameter change allows the system to achieve both easy handling (from the liquid component) and low-temperature reactivity (from the solid component with high reactivity).
2Stability of the object's composition
If DER is used as a raw material, then stable feeding is achieved, but incubation time before film formation is prolonged
Solution Approach 1:
The invention creates a composite raw material system where DER (providing stable feeding) is mixed with a high reactivity ruthenium compound (providing short incubation time). The DER component ensures stable feeding through its liquid state and controlled vapor pressure, while the high reactivity component reduces the incubation time by being more reactive at lower temperatures, thus resolving the contradiction between feeding stability and incubation time.
Solution Approach 2:
The invention uses a small amount of high reactivity ruthenium compound (typically 1-20 wt% of the total raw material) mixed with DER. This partial action approach means that the majority of the raw material (DER) provides stable feeding, while a small portion (the high reactivity compound) is sufficient to reduce the incubation time significantly, achieving the desired effect without excessive use of the solid compound.
3Temperature
If bis(2,4-dimethylpentadienyl)ruthenium is used to achieve high reactivity at lower temperatures, then low temperature film formation is possible, but gasification through sublimation causes unstable feeding due to low carrier gas saturation rate and surface area changes
Solution Approach 1:
The invention forms a composite system where the solid high reactivity ruthenium compound (bis(2,4-dimethylpentadienyl)ruthenium or similar) is mixed with liquid DER. The DER component acts as a carrier that provides stable feeding through its liquid state and controlled vapor pressure, while the solid high reactivity compound provides the low-temperature reactivity. This composite approach eliminates the need for sublimation of the solid compound, thereby ensuring stable feeding while maintaining low-temperature film formation capability.
Solution Approach 2:
The invention uses DER as an intermediary substance that mediates between the solid high reactivity ruthenium compound and the CVD process. The DER carries the solid compound in a stable manner, allowing it to be fed through liquid vaporization rather than solid sublimation. This intermediary approach enables the solid high reactivity compound to be delivered stably to the reaction zone without undergoing sublimation, thus resolving the feeding stability issue while maintaining low-temperature reactivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The ruthenium complex mixture enables stable raw material feeding and produces ruthenium-containing films with improved electrical properties and reduced production time at lower temperatures compared to using (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium alone.
Implementation Method 1
An optimal process for producing a ruthenium-containing thin film in a highly integrated memory element is chemical vapor deposition (hereinafter referred to as CVD)
Implementation Method 2
it is necessary that the complex should be fed after gasified through sublimation
Data Source
AI summary
For forming a thin ruthenium film of good quality by CVD method, it is necessary to form the thin film at low temperature. There hence is a desire for a ruthenium compound having a high reactivity to heat. This invention relates to a method of producing a ruthenium-containing film by CVD or the like using, as a raw material, a ruthenium complex mixture containing (2,4-dimethylpentadienyl)(ethyl-cyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium, the amount of the latter compound being 0.1 to 100% by weight based on the weight of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium, and the like.