High Nucleation Density Ruthenium Compounds for CVD
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving high nucleation density and uniformity in ruthenium thin films due to the low thermal stability and vapor pressure issues of existing organometallic ruthenium compounds, which hinder efficient film deposition processes.
Innovation Solution
The development of high nucleation density organometallic ruthenium compounds through the reaction of bis(substituted-pentadienyl)ruthenium compounds with substituted cyclopentadiene compounds, resulting in compounds with increased electron density and reduced thermal stability, facilitating better metal-substrate interactions and improved film deposition characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If liquid organometallic ruthenium compounds are used as precursors, then ease of handling and vapor pressure are improved, but thermal stability deteriorates
Solution Approach 1:
The patent modifies the molecular structure of organometallic ruthenium compounds by changing parameters such as substituting cyclopentadienyl ligands with pentadienyl ligands and introducing alkyl groups. These structural parameter changes result in compounds that are liquid at room temperature (improved ease of handling) while maintaining acceptable thermal stability for CVD processing.
Solution Approach 2:
The patent creates composite organometallic compounds combining ruthenium with specific ligand combinations (cyclopentadienyl and pentadienyl groups). This composite structure achieves a balance between liquid state properties for ease of handling and thermal stability required for deposition processing.
2Stability of the object's composition
If beta-diketonates are used as precursors, then thermal stability is improved, but vapor pressure and growth rate deteriorate
Solution Approach 1:
The patent changes the molecular parameters of ruthenium compounds by using pentadienyl and cyclopentadienyl ligands instead of beta-diketonates. This parameter change maintains thermal stability while significantly improving vapor pressure and deposition growth rate, achieving higher productivity.
3Ease of operation
If ruthenocene with ethyl substituents is used, then liquid state at room temperature is achieved, but nucleation density and incubation time deteriorate
Solution Approach 1:
The patent modifies the substituent parameters on the cyclopentadienyl ring by introducing specific alkyl groups at particular positions. This parameter change maintains the liquid state at room temperature while dramatically improving nucleation density and reducing incubation time, achieving superior film quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach leads to smoother films with shorter incubation times and higher nucleation densities, enabling thinner film deposition with improved properties suitable for semiconductor applications.
Implementation Method 1
a vapor phase chemical vapor deposition precursor can be contacted with a substrate that is heated to a temperature higher than the decomposition temperature of the precursor, to form a metal or metal oxide film on the substrate
Implementation Method 2
These include, for example, carbonyl complexes such as Ru3(CO)12, diene complexes such as Ru(η3-C6H8)(CO)3
Data Source
AI summary
This invention relates to high nucleation density organometallic ruthenium compounds. This invention also relates to a process for producing a high nucleation density organometallic ruthenium compound comprising reacting a bis(substituted-pentadienyl)ruthenium compound with a substituted cyclopentadiene compound under reaction conditions sufficient to produce said high nucleation density organometallic ruthenium compound. This invention further relates to a method for producing a film, coating or powder by decomposing a high nucleation density organometallic ruthenium compound precursor, thereby producing the film, coating or powder.