Selective Ruthenium Deposition via Temperature Control
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Solution Overview
Problem
The semiconductor industry faces challenges in selectively depositing ruthenium films on various substrate materials with atomic-level precision, particularly on conductive and insulating surfaces, due to the increasing complexity of process flows and the need for high-throughput, conformal deposition techniques that avoid lithography processes.
Innovation Solution
A method involving atomic layer deposition (ALD) is used to selectively deposit ruthenium films on substrates with conductive and insulating materials by exposing them to a ruthenium precursor and a reactant like O2, H2, or H2O, while controlling the substrate temperature to achieve selective deposition on either surface, with selectivity flipping between 200°C and 250°C.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If selective deposition is achieved through inherent surface chemistry selectivity, then manufacturing precision is improved, but device complexity increases and process versatility is limited
Solution Approach 1:
The patent applies parameter changes by systematically varying substrate temperature to control deposition selectivity. By changing the temperature parameter, the process can selectively deposit ruthenium on either conductive or insulating surfaces, achieving atomic-level precision without complex process flows or lithography steps.
Solution Approach 2:
The invention achieves universality by creating a single deposition process that can selectively target different surface types (conductive or insulating) based on temperature control. This multi-functional approach eliminates the need for separate lithography processes or multiple specialized deposition steps, reducing overall device complexity.
2Manufacturing precision
If lithography processes are used for material patterning, then deposition selectivity is achieved, but productivity decreases and manufacturing costs increase
Solution Approach 1:
The patent extracts and eliminates the lithography step from the conventional deposition process. By using temperature-controlled selective deposition, the method achieves material patterning directly during deposition without requiring separate lithography, etching, and deposition steps, thereby increasing productivity and throughput.
Solution Approach 2:
The invention introduces temperature control as an intermediary mechanism to achieve selectivity. Instead of using lithography patterns as intermediaries, the substrate temperature acts as a mediator that directs ruthenium deposition to specific surface types, maintaining precision while improving throughput.
3Productivity
If conventional CVD or ALD is used for ruthenium deposition, then high-throughput conformal deposition is achieved, but selective deposition on specific surfaces cannot be accomplished
Solution Approach 1:
The patent maintains high throughput conformal ALD deposition while adding surface selectivity through parameter changes. By adjusting substrate temperature during the ALD process, the method achieves both high productivity and precise surface-selective deposition on either conductive or insulating surfaces.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for precise and efficient selective deposition of ruthenium films, reducing manufacturing costs and complexity by eliminating the need for lithography, and achieving high selectivity ratios, ensuring accurate material placement at the atomic scale.
Implementation Method 1
Thin-films of ruthenium would ideally be deposited using thin-film deposition techniques such as Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD)
Implementation Method 2
A method involving atomic layer deposition (ALD) is used to selectively deposit ruthenium films on substrates with conductive and insulating materials
Implementation Method 3
The substrate is maintained at a temperature greater than or equal to about 250° C. and ruthenium selectively deposits on the first surface over the second surface
Data Source
AI summary
Methods of selectively depositing ruthenium are described. The preferred deposition surface changes based on the substrate temperature during processing. At high temperatures, ruthenium is deposited on a first surface of a conductive material over a second surface of an insulating material. At lower temperatures, ruthenium is deposited on an insulating surface over a conducting surface.