Ruthenium Embedding in Semiconductor Recesses
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Solution Overview
Problem
Current methods for embedding ruthenium in recesses within semiconductor devices face challenges in achieving low electrical resistance and efficient film formation, particularly due to issues with metal oxide film oxidation and liner film resistivity.
Innovation Solution
The method involves removing the metal oxide film from the surface of the metal layer, forming a ruthenium liner film using specific ruthenium compounds, and embedding ruthenium in a bottom-up fashion to prevent oxidation and reduce contact resistance, utilizing a processing system with multiple chambers for precise control of vacuum and gas supply.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal oxide film is present on the metal layer surface, then the metal layer is protected from oxidation, but the electrical resistance increases and embedding quality deteriorates
Solution Approach 1:
The patent applies preliminary action by performing a reduction treatment on the metal oxide film before the embedding process. This pre-treatment removes the harmful oxide layer that would otherwise increase electrical resistance and prevent proper ruthenium embedding, thereby preparing the surface for optimal embedding quality without compromising the metal layer integrity
2Manufacturing precision
If embedding time is extended to ensure complete coverage, then embedding quality improves, but productivity decreases
Solution Approach 1:
The patent applies parameter changes by optimizing the embedding conditions including temperature, pressure, and gas flow rates. By carefully controlling these parameters, the process achieves complete ruthenium coverage and high embedding quality in a shortened time frame, thereby improving both manufacturing precision and productivity simultaneously
3Reliability
If a liner film is formed to prevent oxidation, then reliability improves, but electrical resistance increases
Solution Approach 1:
The patent applies the inert atmosphere principle by conducting the embedding process in a controlled atmosphere that prevents oxidation of the metal layer. By using an inert or reducing environment during embedding, the process eliminates the need for protective liner films that would otherwise be required, thereby preventing oxidation without introducing additional contact resistance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces electrical resistance, improves productivity by shortening embedding time, and prevents surface oxidation, thereby enhancing the overall performance and efficiency of the ruthenium embedding process.
Implementation Method 1
forming a ruthenium film by depositing a ruthenium source gas
Implementation Method 2
a heating unit, configured to heat the substrate and thermally decompose the ruthenium source gas
Data Source
AI summary
An embedding method includes: removing a metal oxide film at a surface of a metal layer from a substrate that includes the metal layer on a bottom of a recess formed in an insulating layer; covering the surface of the metal layer by embedding ruthenium in the recess from the bottom of the recess; forming a ruthenium liner film in the recess; and further embedding ruthenium in the recess in which the liner film is formed.