Rutile-Type Titanium Oxide Formation via Low-Temperature ALD
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Solution Overview
Problem
Conventional methods for forming rutile-type titanium oxide require high temperatures, which can damage integrated circuit components and are difficult to incorporate into existing integrated circuitry, limiting its use due to the high dielectric constant benefits.
Innovation Solution
Atomic layer deposition (ALD) method forming a titanium nitride monolayer at low temperatures, followed by conversion to rutile-type titanium oxide using an oxidant, allowing for the formation of rutile-type titanium oxide at temperatures below 550°C, avoiding the high-temperature processing issues of traditional methods.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional high-temperature deposition methods are used to form rutile-type titanium oxide, then the dielectric constant is improved (k>100), but the integrated circuit components are damaged due to high temperatures
Solution Approach 1:
The patent changes the temperature parameter from conventional high temperatures (≥660°C) to low temperatures (≤465°C) during atomic layer deposition. This parameter change enables the formation of rutile-type titanium oxide with high dielectric constant (k>100) without causing thermal damage to integrated circuit components, directly resolving the technical contradiction between achieving high reliability and avoiding thermal harm.
Solution Approach 2:
The patent uses atomic layer deposition (ALD) as an intermediary process between the titanium precursor and the final rutile-type titanium oxide product. The ALD process acts as a controlled intermediary that transforms the precursor material into the desired crystal structure at low temperatures, avoiding direct high-temperature exposure that would damage sensitive circuit components while still achieving the high dielectric constant property.
2Stability of the object's composition
If high-temperature annealing is used to convert anatase-type titanium oxide into rutile-type titanium oxide, then the crystal structure is improved, but the processing temperature becomes too high for integrated circuit fabrication
Solution Approach 1:
The patent performs preliminary action by directly depositing rutile-type titanium oxide using atomic layer deposition at low temperatures, eliminating the need for subsequent high-temperature annealing to convert anatase to rutile. This preliminary formation of the correct crystal structure during deposition avoids the harmful high-temperature annealing step entirely, resolving the contradiction between achieving stable crystal structure and maintaining low processing temperature.
Solution Approach 2:
The patent replaces the thermal mechanism (high-temperature annealing) with a chemical vapor deposition mechanism (atomic layer deposition). Instead of using thermal energy to drive the anatase-to-rutile phase transformation, the patent uses controlled chemical reactions during ALD to directly form rutile-type titanium oxide at low temperatures, substituting a chemical process for a thermal process and thereby resolving the temperature contradiction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of rutile-type titanium oxide at lower temperatures, preserving integrated circuit components and providing a high dielectric constant material suitable for capacitor dielectric applications without the damage associated with conventional high-temperature processing.
Implementation Method 1
conversion to rutile-type titanium oxide using an oxidant
Implementation Method 2
Atomic layer deposition (ALD) method forming a titanium nitride monolayer at low temperatures
Data Source
AI summary
Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.