Sacrificial Coating via Fill for Semiconductor Patterning
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Solution Overview
Problem
The selective removal of sacrificial fill material from low dielectric constant materials in Via First Trench Last (VFTL) copper dual damascene patterning is challenging due to the difficulty in achieving both photoresist developer resistance and high etch selectivity, especially with Si—O based fill materials.
Innovation Solution
A sacrificial coating material comprising an inorganic compound and a material modification agent, which is dissolvable in alkaline or fluorine-based chemistry, is developed to improve the removal selectivity and compatibility with low k and ultra-low k dielectric materials, allowing for photoresist patterning on an absorbing composition layer while maintaining resistance to non-aqueous solvents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If Si-O based fill material is baked at high temperature to achieve photoresist developer resistance, then photoresist developer resistance is improved, but removal selectivity is significantly decreased
Solution Approach 1:
The patent changes the chemical composition parameters of the fill material by incorporating fluorinated compounds and controlling organic content (5-50 weight percent) to achieve both photoresist developer resistance and high removal selectivity without requiring high temperature baking
Solution Approach 2:
The patent creates a composite fill material combining inorganic Si-O based compounds with fluorinated organic compounds, where the fluorinated components provide chemical weakness for selective removal while the inorganic matrix provides structural integrity and photoresist resistance
2Ease of manufacture
If porogen or high boiling solvent is added to weaken fill material for improved removal selectivity, then removal selectivity is improved, but photoresist developer resistance deteriorates
Solution Approach 1:
The patent uses fluorinated compounds with specific molecular weight ranges (500-5000) and controlled concentrations (5-50 weight percent) to achieve chemical weakness for selective removal while maintaining photoresist developer resistance through the inorganic matrix structure
3Ease of manufacture
If fill material is chemically weakened to improve removal selectivity, then removal selectivity is improved, but structural strength deteriorates
Solution Approach 1:
The patent creates a composite structure where the inorganic Si-O matrix provides structural strength and the fluorinated organic compounds provide chemical weakness, achieving both mechanical integrity and selective removable
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables effective removal of the sacrificial coating material with high selectivity, enhancing the etch and stripping processes, and minimizing fill bias and voiding in via structures, thus advancing semiconductor component production.
Implementation Method 1
the sacrificial coating material is dissolvable in an alkaline-based chemistry or a fluorine-based chemistry
Data Source
AI summary
A sacrificial coating material includes: at least one inorganic compound, and at least one material modification agent, wherein the sacrificial coating material is dissolvable in an alkaline-based chemistry or a fluorine-based chemistry. A method of producing a sacrificial coating material includes: providing at least one inorganic compound, providing at least one material modification agent, combining the at least one inorganic compound with the at least one material modification agent to form the sacrificial coating material, wherein the sacrificial coating material is dissolvable in an alkaline-based chemistry or a fluorine-based chemistry, but not organic casting solvents commonly used in organic BARC materials.