Sacrificial Gap Filling for Interrupted Trench Patterning
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Solution Overview
Problem
Existing semiconductor processing techniques face challenges in efficiently patterning target layers for forming discontinuous lines and trenches, particularly due to complex process sequences and material stacks required for aggressive scaling.
Innovation Solution
A method involving the formation of parallel material lines with gaps, filling these gaps with a sacrificial material, creating holes to expose the target layer, and filling these holes with a fill material to form block portions that interrupt the gaps, allowing for the transfer of patterns into the target layer without complex material stacks or etching sequences.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If direct printing or block techniques are used for fabricating discontinuous lines, then the pattern can be formed, but the process sequence becomes complex and requires aggressive etching or lithography layer stacks
Solution Approach 1:
The patent segments the gap filling process into distinct stages: first filling gaps with sacrificial material to form continuous structures, then selectively removing sacrificial material in specific regions to create interrupted trenches. This segmentation allows complex discontinuous line patterns to be formed through simpler, more manageable process steps rather than requiring complex direct printing or block techniques.
Solution Approach 2:
The patent performs preliminary action by first forming continuous structures that completely fill the gaps between material lines using sacrificial material. This preliminary continuous filling simplifies the subsequent selective removal process, as the sacrificial material provides a uniform baseline structure from which interrupted trenches can be created through targeted removal rather than requiring complex direct patterning.
2Manufacturing precision
If multiple patterning sequences are employed to decrease pitch or increase density, then sub-lithographic structures can be formed, but the process sequence and material stack complexity increases
Solution Approach 1:
The patent uses sacrificial material as an intermediary substance that facilitates the formation of interrupted trenches without requiring complex material stacks. The sacrificial material serves as a temporary placeholder that can be easily deposited and subsequently selectively removed, providing a simple中介 mechanism to achieve complex discontinuous patterns without the need for multiple lithography and etch sequences.
Solution Approach 2:
The patent changes the physical state or properties of materials through the selective removal process. By removing sacrificial material in specific regions while maintaining it in others, the patent creates parameter variations (presence/absence of material) that define the final interrupted trench pattern. This parameter change approach simplifies the process compared to multiple patterning sequences that would require repeated deposition and removal cycles.
3Manufacturing precision
If complex etching sequences are used to form interrupted trenches, then the desired pattern can be achieved, but the manufacturing process becomes more difficult and time-consuming
Solution Approach 1:
The patent applies the extraction principle by removing the sacrificial material from specific regions after it has been used to form continuous structures. This selective extraction creates the interrupted trench pattern in a single targeted removal step rather than requiring complex multi-step etching sequences. The sacrificial material is taken out only where needed, leaving the desired discontinuous pattern while simplifying the overall manufacturing process.
Data Source
AI summary
The disclosed technology generally relates to semiconductor processing, and more particularly to patterning a target layer using a sacrificial structure. According to an aspect of the disclosed technology, a method of patterning a target layer comprises forming on the target layer a plurality of parallel material lines spaced apart such that longitudinal gaps exposing the target layer are formed between the material lines. The method additionally includes filling the gaps with a sacrificial material and forming a hole by removing the sacrificial material along a portion of one of the gaps, where the hole extends across the gap. The hole exposes the target layer in the gap. The method additionally includes filling the hole with a fill material to form a block portion extending across the gap. The method additionally includes removing, selectively to the material lines and the block portion, the sacrificial material from the target layer to expose the gaps, where the one of the gaps is interrupted in the longitudinal direction by the block portion. The method further includes transferring a pattern including the material lines and the block portion into the target layer.