Salicide Layer Uniformity via Thermal Conductive Intermediary
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Solution Overview
Problem
Conventional salicide layer formation processes in semiconductor devices face issues with non-uniform surface profiles, especially in low-density regions, due to incomplete heat diffusion during the second rapid thermal process, leading to suboptimal salicide layer quality.
Innovation Solution
A thermal conductive layer is formed on the exposed transitional salicide layer before the second rapid thermal process, ensuring complete and uniform heat distribution, allowing for a lower temperature setting and improved salicide layer quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a second RTP process is performed on the transitional salicide layer without additional thermal management, then the salicide layer resistance is reduced, but the heat distribution remains non-uniform especially in low-density regions
Solution Approach 1:
A thermal conductive layer is introduced as an intermediary between the heating source and the transitional salicide layer. This layer mediates the heat transfer process, ensuring uniform heat distribution across the salicide layer during the second RTP process, particularly in low-density regions where heat diffusion is insufficient.
Solution Approach 2:
The invention changes the thermal parameters of the system by introducing a layer with superior thermal conductivity. This parameter change enables better heat diffusion and more uniform temperature distribution during the thermal processing step, resolving the non-uniformity issue without requiring excessive temperature increases.
2Manufacturing precision
If the second RTP temperature is increased to improve heat diffusion, then salicide layer quality improves, but the risk of overheating and damage increases
Solution Approach 1:
The thermal conductive layer serves as a protective intermediary that enhances heat distribution efficiency. This allows the process to achieve good salicide layer quality at lower temperatures by improving heat utilization, thereby avoiding the harmful effects of overheating while still obtaining the desired material quality.
Solution Approach 2:
By changing the thermal conductivity parameter of the system through the introduced layer, the process achieves effective heat diffusion at lower temperature settings. This parameter modification eliminates the need to increase temperature to the point of causing thermal damage, thus resolving the contradiction between quality and safety.
3Manufacturing precision
If conventional RTP process is used without thermal conductive layer, then the process is simple, but heat diffusion is incomplete leading to non-uniform salicide layer
Solution Approach 1:
A thermal conductive layer is introduced as an intermediary component to improve heat diffusion. While this adds a step to the process, it significantly enhances the uniformity of the salicide layer, particularly in low-density regions where conventional processes fail. The added complexity is justified by the substantial improvement in manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the uniformity and quality of the salicide layer by ensuring complete heat transmission, even at lower temperatures, thereby improving the operating speed and performance of semiconductor devices.
Implementation Method 1
a thermal conductive layer is formed on the surface of the transitional salicide layer, and a second RTP is performed on the transitional salicide layer. Thanks to the thermal conductive layer, the heat provided by the second RTP can completely and uniformly diffuse to each transitional salicide layers
Implementation Method 2
a first rapid thermal process (RTP) is then performed on the metal-atom-containing layer to form a transitional salicide layer on a specific region
Data Source
AI summary
The present invention provides a method for forming a salicide layer. First, a metal-atom-containing layer is formed on a substrate, a first rapid thermal process (RTP) is then performed to the metal-atom-containing layer to form a transitional salicide layer on a specific region. The metal-atom-containing layer is then removed, a thermal conductive layer is formed on the surface of the transitional salicide layer, and a second RTP is performed on the transitional salicide layer.