Semiconductor Package Interface Using SAM Bonding for Chip Stack Reliability
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Solution Overview
Problem
Existing semiconductor packages face challenges in achieving high structural stability, reliable electrical connections, and reduced defects, particularly in high-density chip stacks.
Innovation Solution
A semiconductor package design incorporating a first and second semiconductor substrate with insulating layers and an interfacial layer formed by self-assembled monolayers, where the insulating layers are chemically bonded through head groups and terminal groups connected by hydrocarbon chains, enhancing structural integrity and electrical connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional bonding methods (bonding wire or bump) are used to electrically connect semiconductor chips, then electrical connection is achieved, but structural stability and reliability are insufficient
Solution Approach 1:
The patent introduces an interfacial layer comprising self-assembled monolayers (SAMs) as an intermediary between the first and second insulating layers. This interfacial layer facilitates strong chemical bonding through head groups attached to the insulating layers and terminal groups connected via hydrocarbon chains, thereby enhancing structural stability and reliability without increasing overall device complexity
Solution Approach 2:
The patent employs a composite interfacial structure combining organic self-assembled monolayers with inorganic insulating layers. The SAMs form a molecular-scale composite that provides both mechanical reinforcement and chemical bonding capabilities, improving reliability while maintaining a compact structure
2Productivity
If high-density chip stacking is implemented to achieve miniaturization, then capacity and integration density increase, but manufacturing precision and defect reduction become more difficult
Solution Approach 1:
The patent utilizes self-assembled monolayers that automatically organize into ordered structures on the insulating layer surfaces. This self-assembly process occurs spontaneously under controlled conditions, providing precise molecular alignment and consistent bonding interfaces without requiring additional precision manufacturing steps, thus enabling high-density stacking with maintained manufacturing precision
Solution Approach 2:
The patent changes the chemical parameters of the insulating layer surfaces by forming SAMs with specific head groups that can chemically bond to the insulating materials. This parameter change at the molecular level enhances interfacial adhesion and bonding precision, enabling reliable high-density chip stacking
3Reliability
If insulating layers are placed between semiconductor substrates, then electrical insulation is provided, but structural stability and electrical connection reliability deteriorate
Solution Approach 1:
The patent introduces an interfacial layer of self-assembled monolayers as a mediator between the insulating layers and semiconductor substrates. The head groups of the SAMs chemically bond to the insulating layers while the terminal groups provide bonding surfaces, creating a bridging structure that enhances electrical connection reliability without compromising the insulating function
Solution Approach 2:
The patent creates a composite structure where organic self-assembled monolayers are integrated with inorganic insulating layers. This composite interfacial layer provides both mechanical strength for structural stability and chemical bonding capability for electrical connection reliability, while maintaining the necessary electrical insulation properties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides improved structural stability, better electrical connections, and reduced manufacturing defects, leading to a more reliable and durable semiconductor package.
Implementation Method 1
a first interfacial layer between the lower structure and the upper structure, wherein the lower structure includes a first semiconductor substrate, a first pad on the first semiconductor substrate, and a first insulating layer surrounding the first pad on the first semiconductor substrate, the upper structure includes a second semiconductor substrate, a second pad on the second semiconductor substrate, and a second insulating layer surrounding the second pad on the second semiconductor substrate, and the first interfacial layer includes a first self-assembled monolayer bonded to the first insulating layer, and a second self-assembled monolayer bonded to the second insulating layer
Implementation Method 2
the first interfacial layer includes a first self-assembled monolayer bonded to the first insulating layer, and a second self-assembled monolayer bonded to the second insulating layer
Implementation Method 3
the first interfacial layer includes a first head group chemisorbed to a first surface of the first insulating layer, a second head group chemisorbed to a second surface of the second insulating layer
Data Source
AI summary
Provided is a semiconductor package including a lower structure, an upper structure on the lower structure, and a first interfacial layer interposed between the lower structure and the upper structure. The lower structure includes a first semiconductor substrate, a first pad on the first semiconductor substrate, and a first insulating layer surrounding the first pad on the first semiconductor substrate. The upper structure includes a second semiconductor substrate, a second pad on the second semiconductor substrate, and a second insulating layer surrounding the second pad on the second semiconductor substrate. The first interfacial layer includes a first self-assembled monolayer bonded to the first insulating layer, and a second self-assembled monolayer bonded to the second insulating layer.