Self-Assembled Monolayer Formation on Oxidized Substrate Areas
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Solution Overview
Problem
Existing film forming methods face challenges in selectively forming uniform self-assembled monolayers (SAMs) on substrates with non-uniform natural oxide films, which affects the quality and selectivity of subsequent film formations.
Innovation Solution
A method involving the reduction of natural oxide films to form uniform metal oxide films, followed by the selective formation of SAMs using thiol-based organic compounds, which are adsorbed onto the metal oxide films rather than insulating films, allowing for precise control of SAM formation in desired areas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a self-assembled monolayer is formed directly on a substrate with natural oxide films, then the formation process is simple, but the uniformity and density of the SAM are poor due to non-uniform natural oxide films
Solution Approach 1:
The patent applies preliminary action by performing reduction and oxidation treatments on the substrate surface before forming the self-assembled monolayer. The natural oxide film is first reduced to create a uniform metal surface, then selectively oxidized to form uniform metal oxide films in specific areas. This preliminary surface preparation ensures that the subsequent SAM formation occurs on a uniform substrate, resolving the contradiction between process simplicity and SAM quality.
2Manufacturing precision
If photolithography is used to form patterns before SAM deposition, then area selectivity is achieved, but the process complexity increases
Solution Approach 1:
The patent extracts and removes the photolithography step from the process by using selective oxidation of metal surfaces to define patterned areas. Instead of using complex photolithography to create patterns, the method directly oxidizes metal surfaces in desired areas to form metal oxide films, which then selectively attract SAM formation. This eliminates the need for photolithography while maintaining area selectivity, resolving the contradiction between selectivity and process complexity.
3Ease of manufacture
If the natural oxide film is not removed, then the process is simpler, but the selectivity of SAM formation on different materials is poor
Solution Approach 1:
The patent applies local quality by creating different surface properties in different areas of the substrate. The reduction process removes natural oxide films selectively from metal areas, and the subsequent oxidation process creates uniform metal oxide films only in desired patterned areas. This local modification of surface properties ensures that SAM formation occurs selectively on metal oxide surfaces while insulating film areas remain unaffected, resolving the contradiction between process simplicity and formation selectivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of uniform and dense SAMs in specific areas, improving the selectivity and quality of subsequent film formations, enhancing the productivity of semiconductor manufacturing processes.
Implementation Method 1
a reducing treatment for reducing the natural oxide film 11A
Implementation Method 2
an oxidizing treatment for oxidizing a surface of the conductive film 11
Implementation Method 3
a self-assembled monolayer forming treatment in which a self-assembled monolayer 13 is formed on the metal oxide film 11B
Data Source
AI summary
A film forming method for forming an object film on a substrate including: providing the substrate including an oxide layer of a first material formed on a layer of the first material formed on a surface of a first area, and a layer of a second material formed on a surface of a second area, the second material being different from the first material; reducing the oxide layer; oxidizing a surface of the layer of the first material after reducing the oxide layer; and forming a self-assembled monolayer on the surface of the layer of the first material by supplying a raw material gas of the self-assembled monolayer after oxidizing the surface of the layer of the first material.