Self-Assembled Film Patterning Using Carbon Nanotube Masks
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Solution Overview
Problem
Existing techniques for selectively forming a target film on a substrate without photolithography lack control over the shape of self-assembled monolayers (SAMs).
Innovation Solution
A method involving the formation of carbon nanotubes on a conductive material surface, followed by the selective deposition of a self-assembled film using a thiol-based organic compound, which inhibits the formation of a target film in specific regions, allowing control over the shape of the SAMs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a self-assembled monolayer is formed to inhibit target film formation on a substrate, then selective film formation is achieved, but control over the shape of the SAM is insufficient
Solution Approach 1:
The patent applies preliminary action by forming a patterned conductive layer and insulating layer structure before SAM formation. The conductive layer is selectively formed on a first region while an insulating layer is formed on a second region, creating a pre-patterned substrate that guides subsequent SAM formation. This preliminary structuring enables precise shape control of the SAM without requiring complex in-situ control mechanisms during the SAM formation process itself.
Solution Approach 2:
The patent uses the conductive layer and insulating layer as intermediary structures that mediate between the substrate and the final target film. These intermediary layers serve as templates that define the shape and location where the SAM will form, allowing indirect control over SAM morphology through the patterned layer structure rather than direct manipulation of the SAM formation process.
2Manufacturing precision
If photolithography is used to form patterns on a substrate, then precise shape control is achieved, but the manufacturing process becomes more complex and time-consuming
Solution Approach 1:
The patent extracts and eliminates the photolithography step from the manufacturing process. Instead of using photolithography to define patterns, the invention uses direct deposition methods to form the conductive and insulating layers in their final patterned configurations. This extraction of the photolithography process step simplifies the overall manufacturing flow and improves productivity while maintaining pattern definition capability through the selective layer formation approach.
Solution Approach 2:
The patterned structure serves itself by using the inherently different properties of conductive and insulating materials to automatically define the pattern boundaries. The selective formation of conductive layer on first region and insulating layer on second region creates self-defined pattern regions that guide subsequent SAM formation without requiring external patterning tools or processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise control over the shape of SAMs, facilitating nanometer-level miniaturization and enhancing the productivity of semiconductor manufacturing processes.
Implementation Method 1
forming carbon nanotubes on a surface of the layer of the first conductive material
Implementation Method 2
supplying a raw material gas for a self-assembled film to form a self-assembled film on a region of the surface of the layer of the first conductive material in which the carbon nanotubes have not been formed
Data Source
AI summary
The present disclosure provides a technique capable of controlling a shape of an SAM. Provided is a method of forming a target film on a substrate, wherein the method includes preparing a substrate including a layer of a first conductive material formed on a surface of a first region, and a layer of an insulating material formed on a surface of a second region; forming carbon nanotubes on a surface of the layer of the first conductive material; and supplying a raw material gas for a self-assembled film to form the self-assembled film in a region of the surface of the layer of the first conductive material in which the carbon nanotubes have not been formed.