SAM Formulation and Rinse Process for Fast Selective Deposition Blocking
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Solution Overview
Problem
Existing methods for forming self-assembled monolayers (SAMs) on semiconductor surfaces require extended immersion times, which are not compatible with efficient fabrication processes, leading to either high-quality SAMs that act as poor barriers or low-quality SAMs that fail to inhibit subsequent dielectric layer deposition.
Innovation Solution
A hydrogen-based plasma clean is performed on a structure with a metal and dielectric layer, followed by puddling a SAM solution containing SAMs and a high boiling point solvent, then rinsing to remove SAMs from the dielectric layer and inhibit dielectric deposition on the metal layer, using a solvent flood rinse and optional post-bake process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If extended immersion times are used to form high-quality SAMs, then the SAM quality is improved, but the fabrication process efficiency deteriorates
Solution Approach 1:
The patent changes the solvent parameter from conventional low-boiling-point solvents to high-boiling-point solvents (such as gamma-butyrolactone, n-butyl acetate, propylene glycol monomethyl ether, or 4-methyl-2-pentanol), which enables rapid SAM formation within 1-10 minutes while maintaining high quality. This parameter change resolves the contradiction by achieving both high SAM quality and fabrication efficiency.
2Reliability
If extended immersion times are used to form high-quality SAMs, then the barrier performance is improved, but the deposition inhibition capability deteriorates
Solution Approach 1:
The patent changes the solvent boiling point parameter to achieve rapid SAM formation that simultaneously provides both excellent barrier performance and deposition inhibition capability, resolving the trade-off between these two quality aspects.
3Ease of manufacture
If conventional solvents are used for SAM formation, then the process is simple, but the SAM formation time is excessive
Solution Approach 1:
The patent modifies the solvent parameter (boiling point) to enable rapid SAM formation in minutes rather than hours, while maintaining process simplicity through straightforward puddling and rinse procedures, thus resolving the time-simplicity contradiction.
4Productivity
If low-quality SAMs are formed quickly, then the fabrication efficiency is improved, but the barrier performance deteriorates
Solution Approach 1:
The patent uses high-boiling-point solvents to achieve rapid SAM formation that maintains high barrier performance, eliminating the need to sacrifice quality for speed and thus resolving this contradiction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reduces SAM formation time from hours to minutes, enabling high-quality SAMs that effectively prevent dielectric layer deposition on metal surfaces, facilitating faster and more efficient integrated circuit fabrication.
Implementation Method 1
performing a hydrogen-based plasma clean on a structure
Implementation Method 2
hydrogen-based plasma clean
Implementation Method 3
SAMs are created by the chemisorption of 'head groups' onto a substrate
Implementation Method 4
self-assembled monolayers (SAM) formulations
Implementation Method 5
dispensing a SAM solution on the structure, wherein the SAM solution includes SAMs and a solvent
Data Source
AI summary
Embodiments of the invention provide self-assembled monolayers (SAM) formulations and cleaning to promote quick depositions. A hydrogen-based plasma clean is performed on a structure, the structure including a metal layer and a dielectric layer. A self-assembled monolayers (SAM) solution is dispensed on the structure, the SAM solution including SAMs and a solvent, the SAMs being configured to assemble on the metal layer. The structure is rinsed with a rinse solution including the solvent.