Same-Layer Metal Jumper for Adjacent Interconnect Lines
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Solution Overview
Problem
The formation of interconnect structures in semiconductor devices with high device density and performance requirements is complicated by the need for improved resistance and capacitance characteristics, and current methods complicate the connection of adjacent metal lines in critical pitch areas, leading to area penalties and increased complexity.
Innovation Solution
The implementation of a metal jumper structure that connects adjacent metal lines at the same level without using overlying or underlying metal lines or vias, reducing the need for additional interconnects and simplifying the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If traditional interconnect structures using overlying or underlying metal lines and vias are used to connect adjacent metal lines, then connectivity is achieved, but device area increases and manufacturing complexity increases
Solution Approach 1:
The metal jumper merges the connection function into the same metal layer as the adjacent metal lines, eliminating the need for separate via structures and overlying metal lines. This combines multiple interconnect elements (metal lines + vias) into a single-layer structure, reducing both area and complexity
Solution Approach 2:
The invention transitions from a three-dimensional interconnect approach (using vertical vias through multiple layers) to a two-dimensional same-layer connection approach. The metal jumper connects adjacent metal lines horizontally within the same metal layer, eliminating the vertical dimension requirement
2Reliability
If traditional via structures are used to connect metal lines at different levels, then connectivity is achieved, but contact resistance increases
Solution Approach 1:
The metal jumper merges the connection path into a continuous metal structure at the same layer, eliminating the discontinuous via interfaces that cause contact resistance. This creates a unified conductive path without intermediate contact points
3Ease of manufacture
If additional overlying metal lines and vias are added to connect adjacent metal lines, then connectivity is achieved, but manufacturing process complexity increases
Solution Approach 1:
The metal jumper merges the connection function into the base metal layer formation process, eliminating separate via drilling, filling, and planarization steps. This consolidates multiple manufacturing operations into a single layer formation process
Solution Approach 2:
The invention extracts and eliminates the via structures from the interconnect path, removing the complex multi-step via formation process while maintaining connectivity through the same-layer metal jumper approach
Data Source
AI summary
Provided is a semiconductor device which includes: a base layer; a 1st metal line extended in a 1st direction on the base layer; a 2nd metal line extended in the 1st direction, and adjacent to the 1st metal line at a same level, on the base layer; and a metal jumper, between the 1st metal line and the 2nd metal line, at the same level, wherein the metal jumper connects the 1st metal line and the 2nd metal line.