Same-Layer Oxide TFT Manufacturing via Metal Oxidation
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Solution Overview
Problem
The existing manufacturing processes for oxide semiconductor thin film transistors require separate mask processes and etching treatments for active layers and source/drain electrodes, leading to lengthy and costly production times.
Innovation Solution
A method where a metal thin film is used to form a source electrode, drain electrode, and active layer in the same layer, with a stop layer covering the source and drain regions to prevent oxidation, allowing simultaneous patterning and subsequent heat treatment to convert the metal into a metal oxide semiconductor, reducing the number of film coating, etching, and masking processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If separate mask processes and etching treatments are used for active layers and source/drain electrodes, then manufacturing precision can be maintained, but process time increases and productivity decreases
Solution Approach 1:
The patent combines the formation of source/drain electrodes and active layers into a single simultaneous patterning process. A metal thin film is deposited and patterned together to form both the electrodes and the active layer region, eliminating the need for separate mask and etch processes. This merging of operations maintains pattern precision while significantly reducing manufacturing time and improving productivity.
2Manufacturing precision
If multiple separate processes are used for forming electrodes and active layer, then manufacturing precision is maintained, but device complexity increases
Solution Approach 1:
The invention merges multiple process steps into a unified approach. By forming source/drain electrodes and active layers simultaneously through a single metal deposition and patterning operation, the number of discrete process steps is reduced. This decreases device complexity while maintaining the necessary manufacturing precision through careful control of the unified process parameters.
3Manufacturing precision
If separate mask and etch processes are employed, then manufacturing precision can be ensured, but cost increases
Solution Approach 1:
The patent reduces manufacturing cost by merging separate mask and etch processes into a single simultaneous patterning operation. Fewer process steps mean reduced material consumption, lower equipment usage costs, and decreased labor requirements. The unified process maintains pattern formation precision while significantly lowering the overall manufacturing cost structure.
4Reliability
If metal thin film is converted to metal oxide semiconductor through heat treatment, then active layer functionality is achieved, but oxidation of source/drain regions must be prevented
Solution Approach 1:
The patent applies local quality by creating spatial differentiation in the metal thin film structure. The active layer region is designed to undergo oxidation and convert to metal oxide semiconductor, while the source/drain electrode regions are protected from oxidation. This localized control of oxidation properties ensures the active layer achieves its required functionality while preventing unwanted oxidation in the electrode regions, maintaining their electrical conductivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach decreases the complexity and cost of the manufacturing process while maintaining a flat morphology and efficient production of thin film transistors, enabling faster and more economical production of array substrates and display devices.
Implementation Method 1
part or all of the metal in the active layer region is converted into a metal oxide semiconductor
Implementation Method 2
The converting treatment is not limited to heat treatment
Data Source
Figure 1a~1b
Figure 2a~2d
Figure 3a~3c
AI summary
A thin film transistor and manufacturing method thereof, an array substrate and a display device are disclosed. The thin film transistor includes a source electrode (1), a drain electrode (2) and an active layer (3); the source electrode (1), the drain electrode (2) and the active layer (3) are disposed in a same layer, the source electrode (1) and the drain electrode (2) are separately joined to the active layer (3) through their respective side faces (1b, 2b), a material of the source electrode (1) and the drain electrode (2) is metal, and a material of the active layer (3) is a metal oxide semiconductor in correspondence with material of the source electrode (1) and the drain electrode (2). With the thin film transistor, procedures can be decreased, thereby reducing costs.