Sapphire Laser Dicing Crack Position Adjustment
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Solution Overview
Problem
During laser dicing of sapphire wafers for LED production, the inclination of the r-plane cleavage plane relative to the c-plane causes cracks to deviate from the intended dicing path, leading to reduced yield and defective products, especially when the dicing path width is minimized.
Innovation Solution
A laser processing method and apparatus that acquires images of the sapphire during processing, performs edge detection to determine the crack coordinates, calculates an offset parameter, and adjusts the laser processing position accordingly to ensure accurate cracking along the intended path.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the dicing path width is reduced to increase production, then productivity increases, but the crack deviation from the intermediate position causes the emitting electrode region to be scratched, reducing manufacturing precision and yield
Solution Approach 1:
The patent implements a feedback mechanism by using a CCD camera to capture images of the sapphire wafer during laser dicing, detecting the actual crack position, calculating the deviation from the intermediate position, and dynamically adjusting the laser processing position based on this feedback to maintain manufacturing precision while operating with narrow dicing paths
Solution Approach 2:
The system performs preliminary detection of the crack position during the dicing process using image acquisition and edge detection algorithms, calculates the offset parameter in advance, and adjusts the laser processing position before completing the dicing operation to prevent electrode region damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the accuracy and quality of sapphire processing by ensuring the crack aligns with the intermediate position of the dicing path, enhancing the yield and reducing defects, even at narrower dicing path widths.
Implementation Method 1
processing the sapphire along an intermediate point of any dicing path, so as to form a crack on the sapphire
Implementation Method 2
acquiring an image of the sapphire with the crack
Data Source
AI summary
A laser processing method for a sapphire includes: acquiring an image of the sapphire during processing; performing an edge detection to the image to acquire a coordinate of a crack; determining an offset parameter according to the coordinate of the crack; adjusting a laser processing position according to the offset parameter; and further processing the sapphire in accordance with the adjusted laser processing position.