SAW Resonator Spanning Structure for Clutter Wave Isolation
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Solution Overview
Problem
Existing surface acoustic wave (SAW) resonator devices face challenges in reliably suppressing clutter waves without compromising the electrical isolation between interdigital electrode structures, which can lead to capacitive breakdown at high voltages.
Innovation Solution
The proposed surface acoustic wave resonator device incorporates a spanning structure between interdigital electrode connection parts and the corresponding interdigital electrodes, ensuring electrical isolation while maintaining equivalent electrical potential, thereby reducing the risk of capacitive breakdown.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If a metal structure is disposed above the interdigital electrodes to suppress clutter waves, then clutter wave suppression is improved, but the reliability of the resonator device deteriorates due to potential capacitive breakdown at high voltages
Solution Approach 1:
The patent introduces an intermediary structure (the spanning structure with intermediate electrode connection parts) between the interdigital electrodes and the clutter suppression metal structure. This intermediary maintains electrical isolation while allowing the clutter suppression function to operate, thereby resolving the contradiction between clutter suppression and reliability.
Solution Approach 2:
The patent extends the electrode connection parts in the third dimension (vertical direction) to create spanning structures that bridge between different levels. This dimensional extension allows electrical connection at one level while maintaining isolation at another level, enabling both clutter suppression and reliability.
2Reliability
If interdigital electrode connection parts are extended to span between electrodes to maintain electrical potential, then reliability is improved by avoiding capacitive breakdown, but device complexity increases
Solution Approach 1:
The patent merges the electrode connection parts with the clutter suppression metal structure to form an integrated spanning structure. This combination reduces the number of separate components and simplifies the overall device structure while maintaining the electrical isolation function.
Solution Approach 2:
The spanning structure serves multiple functions simultaneously: it provides electrical connection for the interdigital electrodes, maintains electrical isolation to prevent capacitive breakdown, and contributes to clutter wave suppression. This multi-functionality reduces the need for separate dedicated structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses clutter waves and enhances the reliability and performance of the SAW resonator device by avoiding capacitive breakdown, even at high voltages.
Implementation Method 1
a piezoelectric substrate; a first interdigital electrode structure and a second interdigital electrode structure, disposed on a side of the piezoelectric substrate
Implementation Method 2
the first interdigital electrode connection part is in contact with the first interdigital electrode and electrically isolated from the second interdigital electrode through the spanning structure
Data Source
AI summary
A surface acoustic wave resonator device and method for manufacturing the same, and filter, the surface acoustic wave resonator device includes an interdigital electrode body region, and including: a piezoelectric substrate; a first interdigital electrode, a first interdigital electrode connection part and a first interdigital electrode lead-out part electrically connected to each other; a second interdigital electrode, a second interdigital electrode connection part and a second interdigital electrode lead-out part electrically connected to each other; and a spanning structure; wherein the first and second interdigital electrode connection parts are respectively located on opposite sides of the interdigital electrode body region; the first interdigital electrode connection part contacts the first interdigital electrode and is electrically isolated from the second interdigital electrode through the spanning structure; the second interdigital electrode connection part contacts the second interdigital electrode and is electrically isolated from the first interdigital electrode through the spanning structure.