Surface Acoustic Wave Thermal Layer Layout for High-Power Heat Dissipation
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Solution Overview
Problem
Conventional surface acoustic wave (SAW) devices suffer from poor thermal conductivity and inefficient heat dissipation, leading to excessive self-heating and degradation of performance, particularly when operating at high power levels.
Innovation Solution
Incorporating a second thermally conductive layer on the opposing side of the piezoelectric substrate to the interdigital transducer electrode, which enhances heat dissipation by spreading heat over a larger area and transferring it to a heat sink, improving thermal conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a conventional SAW device structure is used, then the device is simple in structure, but heat dissipation efficiency is poor leading to excessive self-heating
Solution Approach 1:
The patent introduces a second thermally conductive layer on the backside of the piezoelectric substrate, transitioning from a single-sided heat dissipation approach to a dual-sided approach. This dimensional expansion allows heat to be conducted away from both surfaces of the substrate, significantly improving heat dissipation efficiency without substantially increasing structural complexity
Solution Approach 2:
The patent introduces thermally conductive layers as intermediary elements between the piezoelectric substrate and the external environment. These layers act as thermal mediators that facilitate heat transfer from the substrate to heat sinks or dissipation paths, improving overall heat dissipation efficiency while maintaining a relatively simple device structure
2Power
If high power levels are used, then the device can handle higher signal power, but excessive self-heating occurs degrading performance
Solution Approach 1:
The patent segments the heat dissipation function by introducing multiple thermally conductive layers at different locations and orientations. This segmentation allows heat to be dissipated through multiple parallel pathways, enabling the device to handle higher signal power levels without excessive self-heating by distributing the thermal load across multiple conductive paths
3Temperature
If thermally conductive layers are added to improve heat dissipation, then heat dissipation efficiency improves, but device complexity increases
Solution Approach 1:
The patent applies partial action by strategically placing thermally conductive layers only where most needed for heat dissipation - specifically on the backside of the substrate and in selective regions. This partial application approach improves heat dissipation efficiency while minimizing the increase in device complexity by avoiding unnecessary layers in all regions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The additional thermally conductive layer significantly improves heat dissipation efficiency, reducing the accumulation of heat around the interdigital transducer electrode and enhancing the power durability of the device.
Implementation Method 1
The second thermally conductive layer is arranged on an opposing side of the piezoelectric substrate to the interdigital transducer electrode and is configured to dissipate heat generated by the surface acoustic wave device
Data Source
AI summary
Embodiments of the invention relate to a surface acoustic wave device including a piezoelectric substrate, an interdigital transducer electrode on the piezoelectric substrate and a first thermally conductive layer arranged over the piezoelectric substrate and interdigital transducer electrode. The first thermally conductive layer is spaced apart from the piezoelectric substrate and interdigital transducer electrode. The surface acoustic wave device also includes a second thermally conductive layer configured to dissipate heat generated by the surface acoustic wave device. The second thermally conductive layer is arranged on an opposing side of the piezoelectric substrate to the interdigital transducer electrode. Related wafer-level packages, radio frequency modules and wireless communication devices are also provided.