SAW Device Wafer Laser Modified Layer Acoustic Diffusion
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Solution Overview
Problem
Surface acoustic wave devices experience degraded frequency characteristics due to acoustic waves being reflected from the reverse side of the wafer during operation.
Innovation Solution
A method involving grinding, polishing, and laser beam application to form a modified layer within the wafer that diffuses acoustic waves, preventing reflections and improving frequency characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the wafer is ground and divided into chips, then the surface acoustic wave device chips are produced, but acoustic waves are reflected by the reverse sides of the chips causing degraded frequency characteristics
Solution Approach 1:
The patent applies laser beams to the reverse side of the wafer to create a modified layer that converts the harmful acoustic wave reflection into beneficial acoustic wave diffusion. The laser-modified layer acts as an acoustic diffusion structure that prevents reflections from reaching the output IDT, thereby improving frequency characteristics while maintaining the standard wafer grinding and chip division process
Solution Approach 2:
The patent changes the physical parameters of the wafer reverse side by applying laser energy to modify the material structure. The laser beam parameters (wavelength, power, scanning speed) are controlled to create a modified layer with specific acoustic properties that diffuse acoustic waves rather than reflect them, thus improving frequency characteristics without affecting the device structure
2Manufacturing precision
If a modified layer is formed by laser beam application, then acoustic wave diffusion is achieved, but additional manufacturing steps are required
Solution Approach 1:
The patent replaces potential mechanical or chemical methods for creating acoustic diffusion structures with a laser-based process. The laser beam application provides a non-contact, precise, and controllable method to modify the wafer reverse side, achieving acoustic wave diffusion without adding complex mechanical structures or chemical treatment steps to the manufacturing process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively prevents acoustic wave reflections, resulting in surface acoustic wave device chips with enhanced frequency characteristics.
Implementation Method 1
a laser beam applying step of applying a laser beam having a wavelength with which the wafer is transmittable to the reverse side of the wafer such that the laser beam is focused at a position within the wafer
Implementation Method 2
to modify an inside of the wafer at the area in which the surface acoustic wave device is formed, thereby forming a modified layer
Implementation Method 3
forming a modified layer for diffusing an acoustic wave... an acoustic wave is prevented from being reflected by the reverse sides of the surface acoustic wave device chips
Implementation Method 4
a grinding step of grinding a reverse side of a wafer with a surface acoustic wave device formed in each area
Implementation Method 5
a polishing step of polishing the reverse side of the wafer
Data Source
AI summary
A method of manufacturing surface acoustic wave device chips includes grinding a reverse side of a wafer with a surface acoustic wave device formed in each area demarcated by a plurality of crossing projected dicing lines on a face side of the wafer; before or after grinding, applying a laser beam to the reverse side of the wafer such that the laser beam is focused at a position within the wafer, the position being closer to the face side of the wafer than a position corresponding to a reverse side of each of the surface acoustic wave device chips to be produced from the wafer, thereby forming a modified layer for diffusing an acoustic wave; and after grinding and applying the laser beam, dividing the wafer along the projected dicing lines into a plurality of the surface acoustic wave device chips.


