Scan Driver Hydrogen Exhaust Contacts for Display Dead-Space Reduction
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Solution Overview
Problem
Existing display devices face challenges in minimizing dead space due to increasing resolution and the number of integrated elements, necessitating innovative designs to optimize space utilization.
Innovation Solution
A scan driver and display device design that utilizes a hydrogen exhaust port as a contact hole to connect semiconductor patterns, reducing dead space by employing etched portions as notches or openings in the semiconductor layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If traditional contact hole designs are used in semiconductor layers, then manufacturing is simpler, but dead space increases and space efficiency decreases
Solution Approach 1:
The hydrogen exhaust port structure is designed to serve dual purposes: it functions as both a hydrogen exhaust port for releasing trapped hydrogen during manufacturing, and as a contact hole for electrical connections between semiconductor layers. This multi-functionality eliminates the need for separate contact hole structures, thereby reducing dead space while maintaining manufacturing feasibility through the existing etching processes.
Solution Approach 2:
The invention merges the hydrogen exhaust port function with the contact hole function by making the hydrogen exhaust port itself serve as the contact hole. This consolidation of two previously separate structural elements reduces the overall area occupied by these features, directly addressing the dead space problem without requiring additional manufacturing steps.
2Measurement precision
If resolution and number of integrated elements increase, then display quality improves, but dead space increases
Solution Approach 1:
The invention utilizes the vertical dimension by forming contact holes through the semiconductor layer using etching processes that create three-dimensional pathways. This allows electrical connections to be established through the thickness of the semiconductor structure rather than requiring additional lateral space, thereby accommodating higher resolution and more integrated elements without increasing dead space.
Solution Approach 2:
The invention changes the geometric parameters of the contact structure by using etched portions that create hydrogen exhaust ports as contact holes. This parameter change allows for more efficient space utilization by reconfiguring the contact hole geometry to match the existing semiconductor layer structure, thereby reducing dead space while supporting higher integration densities.
Data Source
AI summary
A display device includes a plurality of first semiconductor transistors having a first semiconductor layer and a semiconductor pattern; and a plurality of second semiconductor transistors having a second semiconductor layer and a semiconductor pattern. A first electrode layer is located between the first semiconductor layer and the second semiconductor layer, a second electrode layer is located on the second semiconductor layer. A first transistor among the second semiconductor transistors includes a first semiconductor pattern located in the second semiconductor layer, a bridge pattern located in the first electrode layer, and an electrode pattern located in the second electrode layer. The first semiconductor pattern includes an etched portion, and the electrode pattern connects the first semiconductor pattern and the bridge pattern but passes through the etched portion of the first semiconductor pattern and contacts the bridge pattern.