Scan Driver Dummy Transistor Static Electricity Protection

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Solution Overview

Problem

Static electricity can damage thin film transistors in scan drivers during the operation of display devices, leading to performance degradation.

Innovation Solution

The scan driver design includes multiple stages with transistors and capacitors, featuring overlapping electrodes and dummy transistors made of amorphous silicon, which are arranged to prevent short-circuits and ensure stable operation despite static electricity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a scan driver is manufactured using thin film transistors without driver IC, then manufacturing cost is reduced and integration is improved, but the thin film transistors become vulnerable to static electricity damage

Engineering Contradiction:
Improvemanufacturing costVSAvoidstatic electricity resistance
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent introduces dummy transistors as intermediary protective elements that intercept static electricity before it reaches the functional thin film transistors. These dummy transistors act as sacrificial components that absorb or divert electrostatic discharge, protecting the actual operating transistors from damage while maintaining the low-cost TFT architecture.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent implements protective structures including dummy transistors and capacitor configurations that are designed in advance to cushion against static electricity damage. The dummy transistors are positioned and configured beforehand to provide a protective buffer, and capacitors are pre-charged or positioned to mitigate voltage spikes before they can damage the thin film transistors.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

2Reliability

If dummy transistors and capacitor structures are added to protect against static electricity, then reliability is improved, but device complexity increases

Engineering Contradiction:
Improvestatic electricity resistanceVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent uses dummy transistors that are structurally identical or highly similar to the functional thin film transistors, fabricated using the same process and materials. This homogeneous approach allows the protective elements to be integrated seamlessly into the existing TFT architecture without requiring additional complex fabrication steps or different material systems.

Inventive Principle:
Principle #33Homogeneity

Solution Approach 2:

The dummy transistors serve multiple functions: they protect against static electricity damage, maintain electrical signal integrity by providing matched impedance paths, and can potentially serve as spare functional transistors if needed. The capacitor structures also serve dual purposes of voltage stabilization and electrostatic protection.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS10566323B2Scan driver and display device having the same
Publication Date: 2020.02.18 SAMSUNG DISPLAY CO LTD
  • US10566323B2 patent drawing
  • US10566323B2 patent drawing
  • US10566323B2 patent drawing

AI summary

A scan driver has a plurality of stages configured to supply a scan signal to scan lines. The plurality of stages include a stage coupled to a scan line of the scan lines. The stage includes a first transistor including a gate electrode, a drain electrode and a source electrode and is configured to output the scan signal to the scan line; a second transistor provided on a side of the first transistor and connected to the drain electrode; a third transistor provided on the side of the first transistor and connected to the source electrode; a capacitor provided between the scan line and the first transistor; a first dummy transistor provided between the first transistor and the capacitor and connected to the capacitor; and a second dummy transistor provided between the first transistor and the second transistor and connected to both the first transistor and the second transistor.