Scandium Protective Film for Semiconductor Laser COD Resistance
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Solution Overview
Problem
Conventional semiconductor laser elements suffer from catastrophic optical damage (COD) due to light-induced reactions that cause oxidation and crystallization of protective films, leading to unreliable high optical output operations.
Innovation Solution
A semiconductor light-emitting element with a protective film structure that includes scandium-added aluminum oxide or aluminum oxynitride films, which inhibits light-induced crystallization and oxygen diffusion, thereby stabilizing the emission face.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional protective film is used on the emission-side end face, then the end face is covered for protection, but light-induced reactions cause oxidation and crystallization leading to catastrophic optical damage
Solution Approach 1:
The patent changes the chemical composition parameters of the protective film by incorporating scandium into aluminum oxide or aluminum oxynitride, creating a film with enhanced resistance to light-induced reactions while maintaining protective functions
Solution Approach 2:
The patent uses composite material structure by combining scandium with aluminum oxide or aluminum oxynitride to create a protective film that exhibits superior stability against light-induced crystallization and oxidation compared to conventional single-material films
2Stability of the object's composition
If the protective film undergoes light-induced crystallization, then the film structure changes, but this causes expansion or contraction and increases light absorption leading to heat generation
Solution Approach 1:
The patent modifies the physical and chemical parameters of the protective film through scandium addition, raising the crystallization threshold and stabilizing the amorphous phase to prevent light-induced structural changes that would increase light absorption
3Reliability
If oxygen diffusion occurs from outside to inside the protective film, then the end face oxidizes, but this increases light absorption and causes catastrophic optical damage
Solution Approach 1:
The patent changes the chemical composition parameters of the protective film to create a more oxygen-resistant material that prevents oxidation of the underlying nitride semiconductor end face, thereby eliminating the harmful light absorption increase associated with oxidation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a highly reliable semiconductor light-emitting element with reduced degradation and increased optical output stability by inhibiting COD through rapid light-induced crystallization and oxygen diffusion, maintaining film integrity and reducing absorption.
Implementation Method 1
the second reaction is expansion or contraction of the protective film due to gradual light-induced crystallization of the protective film
Implementation Method 2
The first reaction is the oxidation of the end face due to diffusion of oxygen from outside to the inside of the protective film
Implementation Method 3
an increase in the amount of light absorption (i.e., the amount of produced heat) in the oxidized portion occurs
Data Source
AI summary
A semiconductor light-emitting element includes a stacked structure including a semiconductor, the stacked structure having a first end face and a second end face facing each other and forming a resonator; and a protective film disposed on the first end face. The protective film includes a first protective film. The first protective film is an aluminum oxide film or an aluminum oxynitride film to which scandium is added.