Lithography Scanner Aberration Modeling via Hyperdimensional Function

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Solution Overview

Problem

Current calibration methods for lithography models are inefficient, relying on 1-dimensional and 2-dimensional gauge patterns and wafer measurements, which are time-consuming and not robust enough to provide accurate models across the process window.

Innovation Solution

A calibrated model using a hyperdimensional function that correlates patterning system aberration data with new patterning process impact data without simulation, allowing for efficient determination of patterning process impact data and facilitating dynamic in-situ aberration control.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If traditional calibration methods using 1D/2D gauge patterns and wafer measurements are used, then the lithography model can be calibrated, but the process is time-consuming and not robust enough to provide accurate models across the process window

Engineering Contradiction:

Improvemodel accuracyVSAvoidcalibration time

Core Design Contradiction:

Measurement precisionVSLoss of time

Solution Approach 1:

The patent uses aerial image simulations to create virtual copies of the calibration patterns instead of physically measuring 1D/2D gauge patterns and wafer measurements. These simulated aerial images serve as reference data for calibration, eliminating the time-consuming physical measurement process while maintaining model accuracy across the process window

Inventive Principle:

Principle #26Copying

Solution Approach 2:

The patent performs calibration using pre-generated aerial image simulations before actual lithography processing. By preparing calibration data in advance through simulation rather than during or after physical measurements, the calibration process becomes faster and more robust, providing accurate models across the process window without time-consuming measurements

Inventive Principle:

Principle #10Preliminary action

2Measurement precision

If traditional calibration methods are used, then the lithography model can be calibrated, but the process is complex and requires multiple measurement steps

Engineering Contradiction:

Improvemodel accuracyVSAvoidcalibration process complexity

Core Design Contradiction:

Measurement precisionVSDevice complexity

Solution Approach 1:

The patent replaces complex physical measurement and calibration procedures with aerial image simulations. Instead of requiring multiple physical measurement steps and gauge patterns, the system uses simulated aerial images as virtual references, simplifying the calibration process while maintaining or improving model accuracy

Inventive Principle:

Principle #26Copying

Solution Approach 2:

The patent substitutes physical measurement and calibration mechanisms with computational simulation. Rather than using physical gauge patterns and wafer measurements, the system employs aerial image simulations to generate calibration data, eliminating mechanical complexity and reducing the number of calibration steps required

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

3Measurement precision

If full aerial image simulation is performed for calibration, then accurate patterning process impact data can be obtained, but the computation time and resources required are excessive

Engineering Contradiction:

Improvepatterning process impact accuracyVSAvoidcomputational resources

Core Design Contradiction:

Measurement precisionVSUse of energy by moving object

Solution Approach 1:

The patent uses partial aerial image simulation only for generating calibration data, rather than performing full simulations for every patterning process evaluation. By limiting simulations to calibration purposes and using the resulting calibration models for rapid prediction, the system achieves accurate patterning process impact data with significantly reduced computational resources

Inventive Principle:

Principle #16Partial or excessive action

Solution Approach 2:

The patent performs aerial image simulations in advance during calibration to create reference data and calibration models. Once calibrated, these models can rapidly predict patterning process impacts without requiring time-consuming full simulations for each evaluation, reducing overall computational resource usage while maintaining accuracy

Inventive Principle:

Principle #10Preliminary action

Data Source

PatentUS20250138433A1Aberration impact systems, models, and manufacturing processes

Publication Date: 2025.05.01 ASML NETHERLANDS BV

AI summary

Scanner aberration impact modeling in a semiconductor manufacturing process, which may facilitate co-optimization of multiple scanners. Scanner aberration impact modeling may include executing a calibrated model and controlling a scanner based on output from the model. The model is configured to receive patterning system aberration data. The model is calibrated with patterning system aberration calibration data and corresponding patterning process impact calibration data. New patterning process impact data may be determined, based on the model, for the received patterning system aberration data. The model includes a hyperdimensional function configured to correlate the received patterning system aberration data with the new patterning process impact data. The hyperdimensional function is configured to correlate the received patterning system aberration data with the new patterning process impact data in an approximation form, in lieu of a full simulation, without involving calculation of an aerial image or a representation thereof.