Schmitt Trigger ESD Protection in Low-Voltage Integrated Circuits

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Solution Overview

Problem

As semiconductor integrated circuits (ICs) become smaller and more complex, they are susceptible to electrostatic discharge (ESD), which can cause harmful effects to solid-state electronic components. Additionally, reduced operating voltages in ICs affect their performance and make them more vulnerable to ESD.

Innovation Solution

Incorporating a Schmitt trigger circuit coupled in parallel with an ESD circuit within the IC. The Schmitt trigger circuit includes sets of transistors and feedback transistors, along with additional circuits that supply different voltage supplies to specific nodes, preventing parasitic transistors from turning on during an ESD event.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If IC size is reduced and complexity is increased, then device functionality and integration are improved, but susceptibility to electrostatic discharge (ESD) increases

Engineering Contradiction:
Improvedevice functionalityVSAvoidESD susceptibility
Core Design Contradiction:
Adaptability or versatilityVSObject-affected harmful factors

Solution Approach 1:

The patent introduces a parasitic transistor as an intermediary protective element between the ESD event source and the sensitive IC components. When ESD occurs, the parasitic transistor activates and provides a controlled discharge path, mediating the harmful energy before it reaches the main circuitry. This allows the IC to maintain high functionality while gaining ESD protection through the intermediary structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Use of energy by moving object

If operating voltage is reduced, then power consumption is decreased, but ESD resistance is reduced

Engineering Contradiction:
Improvepower consumptionVSAvoidESD resistance
Core Design Contradiction:
Use of energy by moving objectVSObject-affected harmful factors

Solution Approach 1:

The patent implements preliminary anti-action by pre-configuring the parasitic transistor structure to counteract ESD effects before they occur. The parasitic transistor is designed with specific threshold characteristics that allow it to remain inactive during normal low-voltage operation but automatically activate when ESD voltage exceeds the threshold, providing pre-planned protection without affecting normal power consumption.

Inventive Principle:
Principle #9Preliminary anti-action

3Object-affected harmful factors

If parasitic transistors are allowed to turn on during ESD, then ESD current can be discharged, but normal circuit operation is disrupted

Engineering Contradiction:
ImproveESD discharge capabilityVSAvoidcircuit operation stability
Core Design Contradiction:
Object-affected harmful factorsVSReliability

Solution Approach 1:

The patent utilizes parameter changes in the parasitic transistor's operating characteristics. By designing the parasitic transistor with a high threshold voltage and specific biasing conditions, it remains in the off-state during normal operation (maintaining circuit reliability) but transitions to the on-state when ESD voltage exceeds the threshold (enabling ESD discharge). The parameter changes are triggered by the extreme voltage conditions of ESD events.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The parasitic transistor exhibits dynamic behavior, transitioning between off and on states based on the applied voltage conditions. During normal operation, it remains off and does not interfere with circuit functionality. During ESD events, it dynamically activates to provide discharge path, then returns to off-state after the ESD pulse subsides. This dynamic characteristic allows it to serve dual purposes without compromising reliability.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS20250192776A1Integrated circuit and method of manufacturing same
Publication Date: 2025.06.12 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250192776A1 patent drawing
  • US20250192776A1 patent drawing
  • US20250192776A1 patent drawing

AI summary

An integrated circuit includes a Schmitt trigger circuit. The Schmitt trigger circuit includes a first, second, third and fourth transistor, a first and second feedback transistor, and a first and second circuit. The first transistor is connected between a first node and a first voltage supply having a first supply voltage. The fourth transistor is connected between the third transistor and a second voltage supply having a second supply voltage. The first circuit is connected to a second node, the first and second voltage supply, and configured to supply the second supply voltage to the second node in response to being enabled. The second feedback transistor is connected to a third node, and a fourth node. The second circuit is connected to the fourth node, the first and second voltage supply, and configured to supply the first supply voltage to the fourth node in response to being enabled.