Gas Sensor Using Schottky Barrier Junctions for Low Power Detection
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Solution Overview
Problem
Conventional gas sensors that detect gases based on changes in electrical resistance or solid electrolytes require significant power consumption due to the need for constant-current power supplies and heating, making them inefficient in terms of energy usage and production complexity.
Innovation Solution
A gas sensor design featuring a first layer of copper (I) bromide and a second layer of a p-type semiconductor, where one layer is more preferentially in contact with the detection-target gas, allowing for spontaneous polarization and potential difference measurement without the need for constant electric current supply or heating, utilizing Schottky barrier junctions for enhanced sensitivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If gas sensors detect gas based on changes in electrical resistance using constant-current power supply, then gas detection can be achieved, but power consumption of detection circuit becomes large
Solution Approach 1:
The patent replaces the electrical resistance measurement system (requiring constant-current power supply) with a potential difference measurement system based on Schottky barrier junctions. The gas sensor uses a semiconductor layer forming Schottky barriers with metal electrodes, where gas adsorption causes potential difference changes that can be measured without continuous current supply, thereby eliminating the high power consumption associated with constant-current operation.
Solution Approach 2:
The patent changes the detection parameter from electrical resistance to potential difference. By utilizing the contact potential difference at Schottky barrier interfaces between metal electrodes and semiconductor layers, the system can detect gas adsorption through potential changes rather than resistance changes, enabling operation without constant current supply and reducing power consumption.
2Measurement precision
If semiconductor is heated to high temperature for excellent detection properties, then detection sensitivity improves, but large quantity of power is needed for heater
Solution Approach 1:
The patent replaces the thermal heating system with a room-temperature operation system based on Schottky barrier physics. The gas sensor utilizes quantum mechanical tunneling and contact potential differences at metal-semiconductor interfaces, which operate effectively at room temperature without requiring thermal activation, thereby eliminating the need for high-power heating elements while maintaining detection sensitivity.
Solution Approach 2:
The patent changes the operating temperature parameter from high temperature (requiring heater) to room temperature. By exploiting the temperature-independent nature of Schottky barrier contact potentials, the system achieves excellent detection properties without thermal heating, thus eliminating the power consumption associated with heater operation.
3Measurement precision
If porous silicon substrate is used for gas sensor, then gas detection is achieved, but it is difficult to produce on electronic parts because anodizing is solution process
Solution Approach 1:
The patent changes the substrate material from porous silicon (requiring anodizing) to single crystal silicon or epitaxial silicon layers that can be produced using standard semiconductor fabrication processes. These crystalline silicon layers can be formed by CVD, epitaxial growth, or other solid-phase techniques compatible with electronic part manufacturing, eliminating the need for solution-based anodizing while maintaining gas detection functionality through Schottky barrier formation.
Solution Approach 2:
The patent replaces the chemical anodizing process with physical vapor deposition or epitaxial growth methods for creating the semiconductor layer. The gas sensor uses thin films of single crystal silicon or epitaxial silicon grown on standard semiconductor substrates, which can be integrated with electronic parts using existing solid-phase fabrication techniques, thereby improving manufacturability on electronic components.
4Measurement precision
If solid electrolytes are used for gas sensor, then ion conductivity is achieved, but high temperature of 300°C or higher is required for excellent ion conductivity
Solution Approach 1:
The patent replaces the solid electrolyte ion conduction system with a semiconductor Schottky barrier system. Instead of relying on ion transport through solid electrolytes at high temperatures, the gas sensor utilizes electron-hole pair generation and separation at metal-semiconductor interfaces, a mechanism that operates efficiently at room temperature and eliminates the need for high-temperature operation while maintaining detection sensitivity.
Solution Approach 2:
The patent changes the operating temperature parameter from high temperature (300°C or higher) to room temperature. By utilizing the temperature-independent electrical properties of Schottky barriers in semiconductor materials, the system achieves excellent ion conductivity equivalent performance without thermal activation, thereby eliminating the high temperature requirement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The gas sensor achieves high sensitivity and energy-saving efficiency by measuring potential differences without heating, enabling production on electronic parts like thin film transistors with reduced power consumption and no requirement for constant electric current.
Implementation Method 1
utilizing Schottky barrier junctions for enhanced sensitivity
Implementation Method 2
allowing for spontaneous polarization and potential difference measurement
Implementation Method 3
one of the first layer and the second layer is more preferentially in contact with detection-target gas than the other
Data Source
AI summary
A gas sensor including a first layer including copper (I) bromide, and a second layer, which is disposed on the first layer, and is a p-type semiconductor that is different from the copper (I) bromide, wherein one of the first layer and the second layer is more preferentially in contact with detection-target gas than the other.