Schottky Device Barrier Height Adjust Implant
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Solution Overview
Problem
Schottky devices face limitations in high voltage applications due to increased forward voltage and reverse leakage currents, which also result in high cost and inefficiency in manufacturing, with existing techniques failing to provide fast switching, high voltage blocking capability, and low leakage current simultaneously.
Innovation Solution
The implementation of a Schottky device with a barrier height adjust implant that extends a doped layer into the semiconductor material a shorter distance than the zero bias depletion region, utilizing image-force barrier height modulation and reverse bias voltage to reduce leakage current and increase breakdown voltage, while maintaining low forward voltage drop.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the breakdown voltage of a Schottky device is increased, then the voltage blocking capability is improved, but the forward voltage increases and reverse leakage current increases
Solution Approach 1:
The patent applies local quality by creating a non-uniform doping profile with a graded junction depth. The doping concentration varies locally from the surface into the semiconductor, with higher concentration near the surface transitioning to lower concentration deeper in the material. This localized variation in doping quality enables the Schottky device to achieve high breakdown voltage while maintaining low forward voltage drop, resolving the technical contradiction between these two parameters.
2Strength
If the breakdown voltage of a Schottky device is increased, then the voltage blocking capability is improved, but the reverse leakage current increases
Solution Approach 1:
The graded doping profile creates local variations in electrical properties that simultaneously reduce reverse leakage current and increase breakdown voltage. The transition from high to low doping concentration across the junction depth optimizes the depletion region characteristics, preventing harmful leakage while enhancing voltage blocking capability.
3Reliability
If conventional techniques are used to improve Schottky device performance, then manufacturing complexity increases, but cost efficiency decreases
Solution Approach 1:
The patent changes the doping profile parameter from uniform to graded distribution. This parameter change achieves superior device performance with enhanced breakdown voltage and reduced leakage current, while the manufacturing process remains compatible with existing Schottky device fabrication techniques, maintaining cost efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively decreases reverse leakage current with increasing reverse voltage, enhances breakdown voltage, and maintains low forward voltage drop, thereby improving the performance and efficiency of Schottky devices while reducing manufacturing costs.
Implementation Method 1
utilizing image-force barrier height modulation and reverse bias voltage to reduce leakage current and increase breakdown voltage
Implementation Method 2
utilizing image-force barrier height modulation and reverse bias voltage to reduce leakage current and increase breakdown voltage
Data Source
AI summary
A Schottky device includes a barrier height adjustment layer in a portion of a semiconductor material. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type which has a barrier height adjustment layer of a second conductivity type that extends from a first major surface of the semiconductor material into the semiconductor material a distance that is less than a zero bias depletion boundary. A Schottky contact is formed in contact with the doped layer.