Schottky Barrier Power Device Structure for Reverse Recovery Loss
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Solution Overview
Problem
Power devices face inefficiencies due to switching loss, conduction loss, and reverse recovery phenomena, which limit switching frequency and device performance, particularly exacerbated by the reverse recovery current and voltage overshoot during the transition from conducting to non-conducting states.
Innovation Solution
Incorporating a Schottky barrier interface in semiconductor devices to guide current during dead time, allowing a significant portion of the current to flow through the guiding unit instead of the body diode, thereby alleviating reverse recovery issues and reducing power loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a conventional power device is used, then the device can operate, but reverse recovery current and voltage overshoot occur during switching transitions, limiting switching frequency and efficiency
Solution Approach 1:
A guiding unit is introduced as an intermediary component between the anode and cathode that becomes conductive during dead time to guide current flow away from the body diode. This mediator prevents the harmful reverse recovery phenomenon by providing an alternative current path, resolving the contradiction between achieving high switching frequency and minimizing reverse recovery loss.
2Use of energy by moving object
If switching frequency is increased to improve efficiency, then power conversion efficiency improves, but reverse recovery phenomena are exacerbated, limiting maximum operable frequency
Solution Approach 1:
The guiding unit is designed to become conductive during dead time before the body diode can conduct, preemptively directing current flow through a controlled path. This preliminary action prevents the reverse recovery phenomenon from occurring in the first place, allowing higher switching frequencies to be operated reliably without the harmful effects that would otherwise limit maximum operable frequency.
3Loss of energy
If a guiding unit with Schottky barrier interface is added, then reverse recovery issues are alleviated, but device complexity increases
Solution Approach 1:
The guiding unit is merged with the existing power device structure, sharing common terminals (anode and cathode) and integrating the Schottky barrier interface into the device architecture. This combining approach reduces the increase in device complexity by utilizing existing structural elements rather than adding completely separate components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances efficiency, reduces power loss, and increases the maximum operable switching frequency, improving device performance and reliability by minimizing reverse recovery current and voltage overshoot.
Implementation Method 1
a Schottky barrier interface is formed between the top surface of the upper portion of the first dopant region and the first conductive layer
Data Source
AI summary
The present disclosure provides a semiconductor device, including a substrate, a first dopant region in the substrate, wherein the first dopant is doped with a first conductivity type dopant, a first drift region at a top surface of the substrate, a first drain region adjacent to the first drift region, a second drain region, wherein an upper portion of the first dopant region is between the first drain region and the second drain region, and a first conductive layer connecting the first drain region, the second drain region, and a top surface of the upper portion of the first dopant region, wherein a Schottky barrier interface is formed between the top surface of the upper portion of the first dopant region and the first conductive layer.