Schottky BJT Fin Structure for Low Turn-On Voltage
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Solution Overview
Problem
Existing Schottky bipolar junction transistors (BJTs) and Schottky diodes face challenges in achieving low turn-on voltage and high power transfer efficiency due to sensitivity to Vbe mismatch and conduction carrier limitations, which affect their integration in analog circuits and power management applications.
Innovation Solution
A semiconductor structure is designed with N-type and P-type well regions, featuring epitaxially grown source/drain features and electrodes that form Schottky BJTs and diodes with optimized fin layouts and material conductivity, allowing for low turn-on voltage and efficient power handling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional Schottky BJTs and diodes are used, then integration in analog circuits is possible, but Vbe mismatch sensitivity and conduction carrier limitations reduce power transfer efficiency
Solution Approach 1:
The patent changes the fundamental parameters of the Schottky BJT by replacing the conventional diffused or implanted emitter with an epitaxially grown emitter region. This epitaxial growth method allows precise control over emitter composition, doping concentration, and thickness, thereby optimizing the Vbe characteristic and reducing sensitivity to mismatch while improving power transfer efficiency through better material quality and carrier control.
Solution Approach 2:
The patent performs preliminary actions by forming the epitaxial emitter region with predetermined composition and doping profiles before final device fabrication steps. This preliminary structuring of the emitter ensures optimal Vbe characteristics and carrier concentration are established in advance, reducing subsequent sensitivity to manufacturing variations and mismatch.
2Ease of operation
If Schottky BJTs are formed with conventional methods, then device fabrication is possible, but turn-on voltage remains high and power transfer efficiency is limited
Solution Approach 1:
The patent applies parameter changes by controlling the epitaxial growth conditions to achieve specific emitter properties including optimized doping concentration, composition gradients, and thickness. These parameter optimizations directly reduce the turn-on voltage by improving carrier injection efficiency while simultaneously enhancing power transfer through better material quality and reduced defects.
Solution Approach 2:
The patent utilizes composite materials by forming the emitter region through epitaxial growth that can incorporate different semiconductor materials or compositions within the same layer. This composite structure allows optimization of both turn-on voltage and power transfer efficiency by combining materials with complementary properties, such as different bandgaps or doping characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The structure achieves low turn-on voltage and enhanced power transfer efficiency by forming Schottky BJTs and diodes with reduced energy depletion and improved conductivity, suitable for low-power applications and high integration density.
Implementation Method 1
An emitter region of a Schottky bipolar junction transistor (BJT) is formed by the electrodes
Implementation Method 2
a plurality of first source/drain features epitaxially grown on the first fins
Data Source
AI summary
Semiconductor structures of Schottky devices are provided. An N-type well region and a P-type well region are formed over a P-type semiconductor substrate. A first active region is formed over the P-type well region, and includes a plurality of first fins. A second active region is formed over the N-type well region, and includes a plurality of second fins. A third active region is formed over the N-type well region, and includes a plurality of third fins. A plurality of electrodes are formed over the third active region. The electrodes, the first source/drain features and the second source/drain features are formed in the same level. An emitter region of a Schottky BJT is formed by the electrodes, a base region of the Schottky BJT is formed by the N-type well region, and a collector region of the Schottky BJT is formed by the P-type semiconductor substrate.