Schottky Device Geometry Gap Breakdown Voltage
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Solution Overview
Problem
Existing Schottky devices require additional masks and processes to improve breakdown voltage, leading to increased costs and higher conductive resistance.
Innovation Solution
A Schottky device with a geometry gap under the Schottky contact, where the ion types in the substrate and deep well are complementary, allowing adjustment of breakdown voltage without extra masks or processes, and featuring a semiconductor process that forms doped regions and electrodes to optimize ion concentrations and geometries.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the ion concentration of the deep N-well is reduced to improve breakdown voltage, then the breakdown voltage increases, but extra masks and processes are needed and conductive resistance increases substantially
Solution Approach 1:
The device structure is segmented by introducing a geometry gap that divides the deep well region into two parts: a first doped region with first type ions and a second doped region with second type ions. This segmentation allows independent optimization of different regions to achieve high breakdown voltage without additional processing steps
Solution Approach 2:
Different regions of the deep well are assigned different ion types and concentrations to optimize local properties. The first doped region has first type ions while the second doped region has second type ions, creating local quality variations that enable high breakdown voltage while maintaining simple fabrication processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution reduces conductive resistance and costs while enabling adjustable breakdown voltage without additional processing steps, enhancing the performance of Schottky devices.
Implementation Method 1
forming a deep well with a second type of ions in a substrate with a first type of ions; forming a second doped region in the deep well with the first type of ions; forming a heavily doped region in the deep well with the second type of ions
Data Source
AI summary
A Schottky device and a semiconductor process of making the same are provided. The Schottky device comprises a substrate, a deep well, a Schottky contact, and an Ohmic contact. The substrate is doped with a first type of ions. The deep well is doped with a second type of ions, and formed in the substrate. The Schottky contact contacts a first electrode with the deep well. The Ohmic contact contacts a second electrode with a heavily doped region with the second type of ions in the deep well. Wherein the deep well has a geometry gap with a width formed under the Schottky contact, the first type of ions and the second type of ions are complementary, and the width of the gap adjusts the breakdown voltage.