Junction Barrier Schottky Diode Band Alignment for Surge Resistance

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Junction barrier Schottky diodes face challenges in surge resistance due to large energy requirements for hole injection and increased contact resistance when using specific valence band levels for p-type semiconductor layers, which deteriorate their performance.

Innovation Solution

A junction barrier Schottky diode design incorporating a p-type semiconductor layer with a first layer contacting the anode electrode and a second layer contacting the drift layer, where the second layer has a lower valence band upper end level than the first, reducing energy differences and contact resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a material whose valence band upper end level is close to the Fermi level is selected as the p-type semiconductor layer material, then contact resistance between anode electrode and p-type semiconductor layer is reduced, but a large difference between valence band upper end levels of p-type semiconductor layer and drift layer requires large energy for hole injection into drift layer, deteriorating surge resistance

Engineering Contradiction:

Improvesurge resistanceVSAvoidenergy for hole injection

Core Design Contradiction:

ReliabilityVSUse of energy by moving object

Solution Approach 1:

The p-type semiconductor layer is divided into multiple layers with different valence band upper end levels. The first p-type semiconductor layer has a valence band upper end level close to the Fermi level for low contact resistance, while the second p-type semiconductor layer has a valence band upper end level close to the drift layer for low hole injection energy, thereby resolving the contradiction between contact resistance and surge resistance

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the p-type semiconductor layer are assigned different material properties (valence band upper end levels) according to their functional requirements. The first layer contacts the anode electrode and is optimized for electrical contact, while the second layer interfaces with the drift layer and is optimized for hole injection efficiency

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design enhances surge resistance by reducing energy requirements for hole injection and contact resistance, improving the diode's performance compared to single semiconductor material p-type layers.

Implementation Method 1

the second p-type semiconductor layer is lower in valence band upper end level than the first p-type semiconductor layer

Methodology Applied

Scientific EffectEnergy band alignment:

Implementation Method 2

reducing energy requirements for hole injection and contact resistance

Methodology Applied

Scientific EffectContact resistance reduction:

Data Source

PatentUS20250015201A1Junction barrier schottky diode

Publication Date: 2025.01.09 TDK CORP

AI summary

Disclosed herein is a junction barrier Schottky diode that includes a semiconductor substrate, a drift layer provided on the semiconductor substrate, an anode electrode contacting the drift layer, a cathode electrode contacting the semiconductor substrate, and a p-type semiconductor layer contacting both the anode electrode and the drift layer. The p-type semiconductor layer includes a first p-type semiconductor layer contacting the anode electrode and a second p-type semiconductor layer contacting the drift layer. The second p-type semiconductor layer is lower in valence band upper end level than the first p-type semiconductor layer.