Schottky Diode Heterostructure With Parallel Bar-Shaped Junctions
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Solution Overview
Problem
Existing GaN-based Schottky diodes have insufficient 2DEG concentration and mobility at the heterojunction interface, affecting their electrical performance.
Innovation Solution
A Schottky diode structure incorporating a planar heterojunction and multiple bar-shaped heterojunctions, with 2DEG formed near the interface between the channel and barrier layers, and current channels connected in parallel to enhance 2DEG concentration and mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a conventional planar heterojunction structure is used, then the device structure is simple, but the 2DEG concentration and mobility are insufficient
Solution Approach 1:
The patent divides the conventional planar heterojunction into multiple bar-shaped heterojunctions arranged in parallel. Each bar-shaped heterojunction acts as an independent current channel, segmenting the current flow path. This segmentation increases the total 2DEG concentration by creating multiple interfaces while maintaining manageable structural complexity through standardized bar-shaped units.
Solution Approach 2:
The patent transitions from a two-dimensional planar heterojunction to a three-dimensional structure with bar-shaped heterojunctions extending vertically from the substrate. This dimensional change creates additional heterojunction interfaces and increases the effective area for 2DEG formation, thereby increasing 2DEG concentration and mobility without simply scaling up the planar area.
2Quantity of substance
If a conventional planar heterojunction structure is used, then the manufacturing process is simple, but the 2DEG mobility is insufficient
Solution Approach 1:
By segmenting the heterojunction into multiple bar-shaped structures, the patent creates distinct current channels that reduce scattering effects and improve electron mobility within each channel. The segmented structure allows for optimized barrier layer positioning at each bar-shaped interface, enhancing 2DEG mobility through controlled interface quality.
Solution Approach 2:
The patent applies local quality by creating bar-shaped heterojunctions with specific geometric characteristics and material compositions at localized positions. Each bar-shaped heterojunction can be optimized with precise barrier layer thickness and material composition to maximize 2DEG mobility at that specific location, rather than using a uniform planar structure.
3Reliability
If multiple bar-shaped heterojunctions are introduced, then the 2DEG concentration and mobility improve, but the device structure becomes more complex
Solution Approach 1:
The patent merges multiple bar-shaped heterojunctions into a unified heterostructure that shares common substrate and electrode connections. While each bar-shaped heterojunction provides improved 2DEG characteristics, they are combined into a single integrated structure that functions as one device, thereby improving electrical performance without proportionally increasing overall device complexity.
Solution Approach 2:
The bar-shaped heterojunction structure serves multiple functions simultaneously: it increases 2DEG concentration through multiple interfaces, improves mobility through optimized interface quality, and provides parallel current channels for enhanced current carrying capacity. This multi-functionality achieves improved electrical performance without requiring additional separate components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure improves 2DEG concentration and mobility, reducing reverse leakage and enhancing the electrical performance of the Schottky diode.
Implementation Method 1
High-concentration and high-mobility two-dimensional electron gas (2DEG) is formed at the heterojunction interface
Implementation Method 2
2DEG is formed near the interface between the channel and barrier layers
Data Source
AI summary
A Schottky diode includes a substrate, a heterostructure, an anode, and a cathode. The heterostructure includes a planar heterojunction and multiple bar-shaped heterojunctions. The planar heterojunction is located on the substrate. The multiple bar-shaped heterojunctions are located on the surface of the planar heterojunction facing away from the substrate. Each two adjacent ones of the multiple bar-shaped heterojunctions are spaced apart. The anode is located at first ends of the multiple bar-shaped heterojunctions and on the surface of the planar heterojunction facing away from the substrate. The cathode is located at second ends of the multiple bar-shaped heterojunctions and on the surface of the planar heterojunction facing away from the substrate. This solution improves the 2DEG concentration and mobility at the heterojunction interface and improves the electrical performance of the component.