Schottky Diode Doping Layout for Higher Breakdown Voltage
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Solution Overview
Problem
Existing Schottky barrier diodes face challenges in achieving high breakdown voltage and efficient electric field distribution, which limits their performance in radio-frequency applications and power management devices.
Innovation Solution
A manufacturing method involving specific doping processes and structural configurations, including isolation structures, conductive plate structures, and metal silicide layers, to enhance breakdown voltage and electric field distribution in Schottky barrier diodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional Schottky barrier diode structures are used, then manufacturing simplicity is maintained, but breakdown voltage and electric field distribution performance deteriorate
Solution Approach 1:
The diode structure is segmented into multiple functional regions including a first doped region, second doped region, third doped region with different conductivity types and dopant concentrations, and multiple metal silicide layers. This segmentation allows each region to be optimized for specific functions, achieving high breakdown voltage through controlled electric field distribution across the segmented structure.
Solution Approach 2:
Different regions of the diode are assigned different local properties: the third doped region has higher dopant concentration than the first doped region, metal silicide layers are selectively formed on specific doped regions, and isolation structures are positioned at specific locations. This local quality variation enables optimized electric field distribution and high breakdown voltage without requiring uniform structural complexity throughout the entire device.
2Reliability
If doping concentrations are increased to improve breakdown voltage, then electric field distribution improves, but manufacturing precision requirements increase
Solution Approach 1:
Isolation structures are formed beforehand to define and separate the first, second, and third regions before doping processes. This preliminary action establishes precise boundaries that guide subsequent doping steps, ensuring accurate dopant placement and concentration control without requiring extremely high manufacturing precision during the doping itself.
Solution Approach 2:
The patent employs systematic parameter changes in doping concentrations across different regions: the third doped region has higher dopant concentration than the first doped region, while metal silicide layers are formed on regions with specific conductivity types. These controlled parameter variations achieve optimized electric field distribution and high breakdown voltage through a series of manageable doping steps rather than requiring single-step ultra-precise doping.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method significantly improves breakdown voltage and electric field distribution, enhancing the performance of Schottky barrier diodes for radio-frequency applications and power management devices like DC-DC converters.
Implementation Method 1
performing a first implantation process to dope the first region of the semiconductor substrate with a first conductivity type; performing a second implantation process to dope the third region of the semiconductor substrate with a second conductivity type opposite to the first conductivity type; and performing a third implantation process to dope the second region of the semiconductor substrate with the first conductivity type
Data Source
AI summary
A diode device includes a semiconductor substrate, isolation structures, and metal silicide layers. The semiconductor substrate includes a well region and first to third doped regions in the well region. The first and second doped regions have opposite conductivity types, and a conductivity type of the well region is the same as the conductivity type of the second doped region. The third doped region is between the first and second doped regions. A conductivity type of the third doped region is the same as the conductivity type of the first doped region, and a dopant concentration of the third doped region is greater than a dopant concentration of the first doped region. The isolation structures are in the semiconductor substrate and spacing the first to third doped regions apart from each other. The metal silicide layers are respectively over the first and second doped regions.