Schottky Diode Forward Current via Dopant Extraction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing Schottky barrier diodes exhibit low forward current, which is exacerbated by the addition of surface-doped semiconductor layers used in other transistor processes, and the use of extra masks to form these layers is costly.
Innovation Solution
A method of manufacturing Schottky barrier diodes without a surface-doped semiconductor layer, where the surface-doped layer is formed and then completely moved using thermal treatments, integrated into follow-up processing steps, eliminating the need for extra masks and maintaining compatibility with existing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a surface-doped semiconductor layer is added to the Schottky barrier diode structure, then the diode can be integrated with other transistor processes, but the forward current of the Schottky barrier diode deteriorates
Solution Approach 1:
The patent removes the surface-doped semiconductor layer from the Schottky barrier diode structure. By extracting this harmful element (the surface-doped layer) that was causing forward current degradation, the invention restores the electrical performance while maintaining compatibility with transistor fabrication processes through selective area doping techniques.
2Manufacturing precision
If extra masks are used to form surface-doped layers, then the doping can be controlled precisely, but the manufacturing cost increases
Solution Approach 1:
The patent combines the Schottky barrier diode doping process with the transistor fabrication process by using the same masks and doping steps for both devices. This merging of processes eliminates the need for separate masking steps specifically for the Schottky diode, reducing manufacturing complexity and cost while maintaining precise doping control through the shared process methodology.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method significantly increases forward current without affecting reverse characteristics, improving the performance of Schottky barrier diodes while avoiding additional manufacturing costs.
Implementation Method 1
performing a thermal treatment on the surface-doped layer to move the dopant of the surface-doped layer in the dielectric layer
Data Source
AI summary
A Schottky barrier diode is provided, which includes a semiconductor substrate, a first well region, an isolation region, a silicide layer and a silicon oxide-containing layer. The first well region of a first conductivity type is in the semiconductor substrate. The isolation region is in the first well region. The silicide layer is laterally adjacent to the isolation region, and over and in contact with the first well region. The silicon oxide-containing layer is over and in contact with the isolation region.