Schottky Diode Dual Guard Ring Segmentation

The single deep guard ring region is segmented into multiple shallower guard ring regions arranged in a specific pattern. This segmentation allows the electric field reduction function to be distributed across multiple regions, achieving the same reliability improvement without requiring a single deep structure that consumes excessive area.

The solution transitions from a vertical dimension approach (single deep guard ring) to a horizontal dimension approach (multiple shallower guard rings arranged spatially). By distributing the guard ring structures across the horizontal plane rather than concentrating depth, the patent reduces area consumption while maintaining the electric field management function.

The reverse leakage current reduction function is achieved through multiple segmented guard ring regions rather than a single deep structure. Each shallower guard ring segment contributes to reducing the electric field concentration, collectively achieving low reverse leakage without the area penalty of a deep single structure.

Each guard ring region is designed with appropriate local characteristics (shallower depth, specific spacing, strategic positioning) to optimize the electric field distribution at critical locations. This local optimization approach reduces reverse leakage current more efficiently than a uniform deep structure.

Multiple shallower guard ring regions work collectively to achieve the same breakdown voltage enhancement that a single deep structure would provide. The segmented approach distributes the voltage management function across multiple structures, maintaining reliability while reducing area consumption.

Multiple shallower guard ring regions are combined in a specific spatial arrangement to achieve the cumulative effect of a single deep guard ring. By merging the functions of multiple shallow structures, the patent achieves equivalent or superior performance with reduced area consumption.