Schottky Barrier Diode Acute Angle Edge Filling

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Solution Overview

Problem

The existing Schottky barrier diodes (SBDs) face challenges in stable mass production due to difficulties in processing acute angle patterns, leading to variations in electric properties among mass-produced devices, particularly in the formation of p-type contact regions.

Innovation Solution

The proposed Schottky barrier diode design includes a semiconductor substrate with a p-type contact region comprising a first p-type region, a second p-type region, and an edge filling portion, where the acute angle edges are filled with the edge filling portion, preventing sharp-angle bends and ensuring stable electric properties during mass production.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If the p-type contact region uses acute angle contours to connect corner portions, then the device structure can be compact, but the manufacturing precision deteriorates due to difficulty in stably processing acute angle patterns

Engineering Contradiction:
Improvedevice structure compactnessVSAvoidpattern processing stability
Core Design Contradiction:
Volume of moving objectVSManufacturing precision

Solution Approach 1:

The patent replaces acute angle contours with curved contours in the p-type contact region. Specifically, the contour extends from the corner portion along a curve rather than a straight acute angle line, making the angle formed by the contour and the stripe-patterned region greater than 90 degrees. This curvature modification enables stable mass production while maintaining device functionality.

Inventive Principle:
Principle #14Spheroidality (Curvature)

2Area of stationary object

If the contour of the p-type contact region forms acute angles with stripe-patterned regions, then the device can achieve compact layout, but the reliability deteriorates due to large variations in electric properties among mass-produced devices

Engineering Contradiction:
Improvecontact region areaVSAvoidelectric property consistency
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

The patent introduces curved contours that form angles greater than 90 degrees with stripe-patterned regions, replacing acute angle configurations. This curvature ensures consistent processing across mass production, thereby maintaining reliable and consistent electric properties while achieving compact device layout through optimized curved geometry.

Inventive Principle:
Principle #14Spheroidality (Curvature)

3Device complexity

If acute angle edges are left unfilled in the p-type contact region, then the manufacturing process is simpler, but the productivity deteriorates due to low yield from unstable pattern processing

Engineering Contradiction:
Improvestructure complexityVSAvoidmass production yield
Core Design Contradiction:
Device complexityVSProductivity

Solution Approach 1:

The patent employs curved contours with angles greater than 90 degrees, which are significantly easier to process stably than acute angle patterns. This curvature modification dramatically improves mass production yield by enabling consistent pattern formation across all devices, while the added structural complexity is minimal and confined to the contour geometry.

Inventive Principle:
Principle #14Spheroidality (Curvature)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design allows for precise formation of p-type contact regions, reducing variations in electric properties among mass-produced SBDs and enhancing manufacturing yield by preventing acute angle bends, thus ensuring consistent performance.

Implementation Method 1

an anode electrode in contact with a surface of the semiconductor substrate... an n-type drift region being in Schottky contact with the anode electrode

Methodology Applied
Scientific EffectSchottky barrier: Electrical Resistance

Data Source

PatentUS9972674B2Schottky barrier diode and manufacturing method thereof
Publication Date: 2018.05.15 TOYOTA JIDOSHA KK
  • US9972674B2 patent drawing
  • US9972674B2 patent drawing
  • US9972674B2 patent drawing

AI summary

A technique stabilizing properties of SBDs is provided. An SBD is provided with a p-type contact region in contact with an anode electrode, and an n-type drift region in Schottky contact with the anode electrode. The p-type contact region includes a first p-type region having a corner portion, a second p-type region connected to the corner portion, and an edge filling portion located at a connection between the first p-type region and the second p-type region. First and second extended lines intersect at an acute angle, where the first extended line is a line extended from a contour of the first p-type region toward the connection and the second extended line is a line extended from a contour of the second p-type region toward the connection. An acute angle edge formed between the first extended line and the second extended line is filled with the edge filling portion.